1N6463US Circuit Protection

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1N6463US belongs to TVS (Transient Voltage Suppressor) devices. TVS Diodes are developed to provide overvoltage protection against sources such as inductive transients, electrostatic discharge, or induced lightning. They are typically connected from the signal line to a common ground to protect the signal source from high voltage transients.

The 1N6463US has a breakover voltage of 6V and a maximum reverse leakage current of 50µA. It is housed in a low profile SMA package and is ideal for providing overvoltage protection in a wide range of applications. The device is designed to have low capacitance, high back-to-back protection, and low leakage current. It is also able to sustain a high peak pulse current capability.

The 1N6463US is used in a wide range of overvoltage protection applications including car electronics, power supplies, consumer electronics, lighting, and industrial instrumentation. It is ideal for protecting sensitive components such as microprocessors and logic ICs from overvoltage transients. The device is suitable for continuous operation up to 6V and features excellent surge immunity and low power dissipation.

The working principle of the 1N6463US is based on the principle of a breakdown diode. When a voltage above its breakdown voltage is applied, the current begins to flow. This current then begins to rapidly increase, which can cause an excessive power dissipation and damage to the device. To prevent this, the 1N6463US is designed to provide a low capacitance path to shunt the excess current away, preventing damage to the device.

When an overvoltage transient occurs, the excess current is quickly diverted from the protected line to the ground, protecting the components from any damage. The device also provides a high level of back-to-back protection, ensuring minimal leakage current between the signal lines. This helps to protect sensitive components and reduce power dissipation.

In summary, the 1N6463US is a TVS (Transient Voltage Suppressor) device designed to provide overvoltage protection in many different types of applications. It is designed to provide a low capacitance path, high back-to-back protection, and low leakage current. The device is able to sustain high peak pulse currents and provide excellent surge immunity.

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