| Allicdata Part #: | 1N6485-ND |
| Manufacturer Part#: |
1N6485 |
| Price: | $ 8.67 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | ZENER DIODE |
| More Detail: | Zener Diode |
| DataSheet: | 1N6485 Datasheet/PDF |
| Quantity: | 1000 |
| 100 +: | $ 7.80437 |
| Series: | * |
| Part Status: | Active |
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A 1N6485 is a single-voltage, axial-leaded, glass-encapsulated zener diode. This type of zener diode is most often used for voltage regulation and/or referencing, or to establish a particular voltage reference point. It is also used in signal isolation circuits and current limiting, and in protection against overvoltage or transients.
The 1N6485 diode is a voltage-regulating device and provides the same function as a regular diode with the added feature of a zener breakdown voltage. The zener breakdown voltage is the maximum value of the voltage that a zener diode can be specified to handle with minimum leakage current. The exact specification for the 1N6485 is 6.8V at 1mA.
The 1N6485 is characterized by a range of features and benefits, including a low voltage rating, low leakage current, and low capacitance. It is an effective device for stabilizing or regulating voltages and currents as well as providing isolation, or as a voltage reference to establish a constant voltage level. The robust design also makes it well-suited for protection against overvoltage or transients.
An understanding of the operating principles of a zener diode is important to understand its application. The 1N6485 is an axial-leaded glass-encapsulated zener diode, and its construction consists of two elements – an anode and a cathode. The two elements are connected together inside the diode and when a voltage is connected to the anode and the cathode, then a current will flow from the anode to the cathode. The current flow is reversed when the polarity of the applied voltage is reversed.
The 1N6485 provides for the breakdown of an applied voltage when the voltage exceeds the zener breakdown voltage. This is known as forward zener breakdown, with the current resulting in a voltage drop across the junction. The result is a constant voltage across the diode, regardless of the current through the device, so that the voltage remains constant even when the current varies. This is known as the zener effect, and it is the basis for the zener regulating action of the 1N6485.
In addition to being used as a voltage regulator, the 1N6485 is also useful in signal isolation circuits and current limiting applications. Signal isolation refers to preventing a signal or current from flowing from one circuit to another. The 1N6485 is used in this application due to its low breakdown voltage, which limits the current through the diode and thus the amount of energy that can be transferred from one circuit to another. This ensures a more reliable and secure connection between the two devices.
The 1N6485 is also suitable for use in current limiting applications due to its low voltage rating. This is because the maximum allowable voltage taken by a current limiting device is proportional to the reverse breakdown voltage of the diode. This ensures that the currents flowing through the diode are not higher than the rated current and voltage, thus preventing overloads and any related damage.
The 1N6485’s versatile characteristics and robust design make it ideal for many applications such as reducing noise on an analog signal, voltage stabilizing, preventing overvoltage or transients, and providing signal isolation. It is also useful in voltage reference applications, current limiting, and protection against overvoltage transients. With its versatility, reliability, and high insulation resistance, the 1N6485 is an ideal choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| 1N645-1/TR | Microsemi Co... | 0.0 $ | 1000 | SWITCHINGDiode Standard 2... |
| 1N6482HE3/96 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
| 1N646 | Microsemi Co... | 1.08 $ | 1000 | SILICON SWITCHING DIODESD... |
| 1N6482HE3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
| 1N649-1 | Microsemi Co... | 3.14 $ | 217 | DIODE GEN PURP 600V 400MA... |
| 1N6461US | Microsemi Co... | -- | 414 | TVS DIODE 5V 9V B AXIAL |
| 1N6490US | Microsemi Co... | 11.77 $ | 59 | DIODE ZENER 5.1V 1.5W D5A... |
| 1N6467 | Semtech Corp... | 6.19 $ | 1000 | TVS DIODE 40.3V 63.5V AXI... |
| 1N6468US | Semtech Corp... | 8.09 $ | 1000 | TVS DIODE 51.6V 78.5V |
| 1N6482-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
| 1N6475US | Semtech Corp... | 8.29 $ | 1000 | TVS DIODE 40.3V 63.5V GME... |
| 1N6479HE3/96 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
| 1N6475 | Semtech Corp... | 7.29 $ | 1000 | TVS DIODE 40.3V 63.5V AXI... |
| 1N6479-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
| 1N6478HE3/96 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
| 1N6476US | Semtech Corp... | 8.29 $ | 1000 | TVS DIODE 51.6V 78.5V GME... |
| 1N6483HE3/96 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
| 1N6461 | Semtech Corp... | 6.19 $ | 1000 | TVS DIODE 5V 9V AXIAL |
| 1N6478-E3/96 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
| 1N6479-E3/96 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 100V 1A DO... |
| 1N646UR-1 | Microsemi Co... | 3.81 $ | 1000 | SILICON SWITCHING DIODESD... |
| 1N6483-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
| 1N6472 | Semtech Corp... | 7.29 $ | 1000 | TVS DIODE 15V 26.5V AXIAL |
| 1N6485 | Microsemi Co... | 8.67 $ | 1000 | ZENER DIODEZener Diode |
| 1N6481-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
| 1N645-1E3 | Microsemi Co... | 1.03 $ | 1000 | SWITCHING DIODEDiode Stan... |
| 1N6462US | Semtech Corp... | 8.09 $ | 1000 | TVS DIODE 6V 11V |
| 1N6488US | Microsemi Co... | 9.18 $ | 1000 | ZENER DIODEZener Diode |
| 1N6483HE3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
| 1N6489US | Microsemi Co... | 9.18 $ | 1000 | ZENER DIODEZener Diode |
| 1N6489 | Microsemi Co... | 8.67 $ | 1000 | ZENER DIODEZener Diode |
| 1N6473 | Semtech Corp... | 7.29 $ | 1000 | TVS DIODE 24V 41.4V AXIAL |
| 1N6484HE3/96 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
| 1N6474US | Semtech Corp... | 8.29 $ | 1000 | TVS DIODE 30.5V 47.5V GME... |
| 1N6468 | Microsemi Co... | 12.82 $ | 16 | TVS DIODE 51.6V 78.5V AXI... |
| 1N6469 | Semtech Corp... | 7.29 $ | 1000 | TVS DIODE 5V 9V AXIAL |
| 1N6488 | Microsemi Co... | 8.67 $ | 1000 | ZENER DIODEZener Diode |
| 1N6484-E3/96 | Vishay Semic... | -- | 4500 | DIODE GEN PURP 1KV 1A DO2... |
| 1N6473US | Semtech Corp... | 8.29 $ | 1000 | TVS DIODE 24V 41.4V GMELF |
| 1N6481HE3/96 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
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1N6485 Datasheet/PDF