
Allicdata Part #: | 1N6481HE3/96-ND |
Manufacturer Part#: |
1N6481HE3/96 |
Price: | $ 0.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 400V 1A DO213AB |
More Detail: | Diode Standard 400V 1A Surface Mount DO-213AB |
DataSheet: | ![]() |
Quantity: | 1000 |
6000 +: | $ 0.08100 |
Series: | SUPERECTIFIER® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 10µA @ 400V |
Capacitance @ Vr, F: | 8pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AB, MELF (Glass) |
Supplier Device Package: | DO-213AB |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | 1N6481 |
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Diodes - Rectifiers - Single: 1N6481HE3/96 Application Field and Working Principle
A diode is an electrical component that allows current to flow in only one direction. It has two terminals, called anode and cathode. One of these is the input and the other is the output or load. The 1N6481HE3/96 is a type of single phase rectifier diodes, which are used to rectify an AC input into DC output power. This type of diode is commonly used in applications such as switching power supplies, battery chargers, emergency lighting, and general purpose power conditioning applications.
The 1N6481HE3/96 diode is a fast recovery time (FRT) diode. The FRT type diodes are distinguished from the standard recovery time diodes by their high forward voltage recovery rate. This is accomplished by speeding up the time it takes for the diode to recover from the avalanche breakdown voltage when the diode is switched off. This results in improved efficiency and reduced power dissipation.
The 1N6481HE3/96 can handle a maximum reverse voltage of 1000V, a forward current rating of 60A, and a power dissipation of 150W. It has a reverse leakage current of 200uA and a maximum junction temperature of 150°C. The device has a relatively low forward voltage of 1.4V for currents up to 30A, which makes it ideal for use in low voltage applications.
The main advantage of using the 1N6481HE3/96 diode is its high efficiency and excellent power dissipation characteristics. Its fast recovery time helps to reduce the power dissipation, resulting in a more efficient conversion of AC to DC power. Its low forward voltage also helps to reduce power losses. Finally, the device offers good surge capability, high current ratings, and a wide ambient temperature range, making it suitable for a variety of applications.
The 1N6481HE3/96 diode works by allowing current to flow through it in one direction, while blocking the current in the opposite direction. This type of diode is commonly used to rectify alternating current (AC) into direct current (DC). The diode works by allowing current to flow through it in one direction, while blocking it in the opposite direction. It then converts the AC signal into a DC signal, with the help of a power supply.
In conclusion, the 1N6481HE3/96 diode is a high efficiency, fast recovery time, single-phase rectifier diode, mainly used in low voltage applications. It offers good surge capability, high current ratings, and a wide ambient temperature range, making it suitable for a variety of applications. Its low forward voltage also helps to reduce power losses, making it an ideal choice for power conditioning applications.
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Part Number | Manufacturer | Price | Quantity | Description |
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1N6478HE3/96 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
1N6479HE3/96 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
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1N6461 | Semtech Corp... | 6.19 $ | 1000 | TVS DIODE 5V 9V AXIAL |
1N6483HE3/96 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N6482-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N6468US | Semtech Corp... | 8.09 $ | 1000 | TVS DIODE 51.6V 78.5V |
1N6489 | Microsemi Co... | 8.67 $ | 1000 | ZENER DIODEZener Diode |
1N6473 | Semtech Corp... | 7.29 $ | 1000 | TVS DIODE 24V 41.4V AXIAL |
1N6489US | Microsemi Co... | 9.18 $ | 1000 | ZENER DIODEZener Diode |
1N6474US | Semtech Corp... | 8.29 $ | 1000 | TVS DIODE 30.5V 47.5V GME... |
1N6484HE3/96 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
1N6468 | Microsemi Co... | 12.82 $ | 16 | TVS DIODE 51.6V 78.5V AXI... |
1N6480-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N6479-E3/96 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 100V 1A DO... |
1N646UR-1 | Microsemi Co... | 3.81 $ | 1000 | SILICON SWITCHING DIODESD... |
1N6470US | Semtech Corp... | 8.29 $ | 1000 | TVS DIODE 6V 11V GMELF |
1N6485US | Microsemi Co... | 9.18 $ | 1000 | ZENER DIODEZener Diode |
1N645UR-1 | Microsemi Co... | 1.69 $ | 1000 | DIODE GEN PURP 225V 400MA... |
1N646-1 | Microsemi Co... | 1.08 $ | 1000 | DIODE GEN PURP 300V 400MA... |
1N6492 | Microsemi Co... | -- | 1000 | ZENER DIODEZener Diode |
1N6485 | Microsemi Co... | 8.67 $ | 1000 | ZENER DIODEZener Diode |
1N6481-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N645-1E3 | Microsemi Co... | 1.03 $ | 1000 | SWITCHING DIODEDiode Stan... |
1N6479HE3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
1N6486 | Microsemi Co... | 8.67 $ | 1000 | ZENER DIODEZener Diode |
1N6463US | Semtech Corp... | 8.09 $ | 1000 | TVS DIODE 12V 22.6V |
1N6465US | Semtech Corp... | 8.09 $ | 1000 | TVS DIODE 24V 41.4V |
1N647-1 | Microsemi Co... | 2.05 $ | 4401 | DIODE GEN PURP 400V 400MA... |
1N6466 | Semtech Corp... | 6.19 $ | 1000 | TVS DIODE 30.5V 47.5V AXI... |
1N6481HE3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N647UR-1 | Microsemi Co... | 3.16 $ | 1000 | DIODE GEN PURP 400V 400MA... |
1N6482HE3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N646 | Microsemi Co... | 1.08 $ | 1000 | SILICON SWITCHING DIODESD... |
1N645-1 | Microsemi Co... | 1.58 $ | 1628 | DIODE GEN PURP 225V 400MA... |
1N6484HE3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
1N6481-E3/96 | Vishay Semic... | 0.08 $ | 4500 | DIODE GEN PURP 400V 1A DO... |
1N6478-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
1N6478HE3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
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