2N5209 Allicdata Electronics
Allicdata Part #:

2N5209-ND

Manufacturer Part#:

2N5209

Price: $ 0.49
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: TRANS NPN 50V 0.05A TO-92
More Detail: Bipolar (BJT) Transistor NPN 50V 50mA 30MHz 350mW ...
DataSheet: 2N5209 datasheet2N5209 Datasheet/PDF
Quantity: 465
1 +: $ 0.44730
10 +: $ 0.39375
25 +: $ 0.34852
100 +: $ 0.30366
250 +: $ 0.26427
500 +: $ 0.22491
1000 +: $ 0.17993
2500 +: $ 0.16306
5000 +: $ 0.15182
Stock 465Can Ship Immediately
$ 0.49
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100µA, 5V
Power - Max: 350mW
Frequency - Transition: 30MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92
Description

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The 2N5209 is a single transistor that is part of the bipolar junction transistor (BJT) family. It is a medium power, high gain and low noise transistor, often used in low power audio amplifiers and hearing aids.

A bipolar junction transistor (BJT) is a type of transistor, which is basically a semiconductor device that contains three layers of semiconductor material. The individual layers are known as the collector, the base, and the emitter. BJTs allow the amplification, switching and working of currents, voltages, and signals that involve electronic control of electricity in electronic circuits.

The 2N5209 has a collector-emitter voltage of 200V, a collector current of 1A, and a continuous collector power dissipation of 500mW. It is designed for use in linear and digital applications, such as amplifiers, switches, and digital logic. The 2N5209 has a maximum current gain (hFE) of 800 and a maximum transition frequency of 100MHz. It is a high gain device, and its frequency response is optimized for low-noise, low-distortion applications.

The working principle of the 2N5209 is the same as a normal bipolar junction transistor. To start the process, a base current is supplied to the base layer of the transistor. When this happens, the electrons in the base become more mobile, allowing them to travel between the base and the collector. As a result, a voltage is established between the source and the collector, and a current is conducted between the emitter and collector. This current can be amplified by increasing the base voltage. The amplified signals are used in a variety of electronic circuits for amplifying or switching signals.

The 2N5209 has a wide range of applications in many electronic circuits. It is commonly used in audio amplifiers, hearing aids, and switching applications. It is also used in power supplies, radio-frequency amplifiers, and high-speed digital circuits. The 2N5209 can also be used in pulse-width modulation and frequency conversion circuits. In addition, the 2N5209 is often used in instrumentation controls and measurement devices.

Overall, the 2N5209 is an effective transistor that is ideal for low-noise, low-distortion applications. It has a high current gain and a wide range of applications. It is easy to use and cost-effective, making it an ideal choice for many electronic circuits.

The specific data is subject to PDF, and the above content is for reference

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