Allicdata Part #: | 2N5210TAFSTB-ND |
Manufacturer Part#: |
2N5210TA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 50V 0.1A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 50V 100mA 30MHz 625mW... |
DataSheet: | 2N5210TA Datasheet/PDF |
Quantity: | 2000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 700mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 100µA, 5V |
Power - Max: | 625mW |
Frequency - Transition: | 30MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N5210 |
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The 2N5210TA is a type of NPN transistor manufactured by semiconductor leader, STMicroelectronics. This device operates as a single transistor with three distinct terminals: base, collector, and emitter. It is widely used in a variety of applications and is also known as a Silicon NPN transistor.
The 2N5210TA is designed to provide optically isolated connections between two or more electrical devices or circuits. It is a silicon-based bipolar junction transistor (BJT). These devices have a PN junction with two layers of silicon semiconductor material between the base and collector. The electrical current is then passed through these layers to a controlled output. This BJT device is considered "single" in that only one component is used in its construction.
The main application of the 2N5210TA is in digitally-controlled systems such as industrial automation, data acquisition, and test & measurement systems. It is used as an electronic switch, where the base and collector terminals act as a controlled gate to driving an electrical circuit. The 2N5210TA may also be used in analog circuits, such as amplifiers, to amplify signals with much greater accuracy than two or three-transistor amplifiers. Because of its low voltage and power ratings, the 2N5210TA is also used in low-power LED driver and LED array circuits, as well as in power controller modules that regulate the flow of electricity.
The working principle of the 2N5210TA is relatively simple: current is passed through the base-collector junction and amplified as it passes through the emitter. The current is proportional to the amount of current flowing through the base-collector junction, and the output voltage is proportional to the amount of current passing through the emitter. When the voltage is increased in the base-collector junction, the current flows through the emitter more quickly, resulting in an increase in the output voltage. When the voltage is decreased in the base-collector junction, the current flows through the emitter more slowly, resulting in a decrease in the output voltage.
In conclusion, the 2N5210TA is a single-transistor, NPN Silicon BJT designed for digital and analog applications. This transistor was designed to provide optically isolated connections between two or more electrical devices or circuits and is used in a variety of consumer and industrial applications. The 2N5210TA works by amplifying current through the base-collector junction and then passing it through the emitter. This amplifier effect is responsible for the output voltage, which can be increased or decreased depending on the applied voltage at the base-collector junction.
The specific data is subject to PDF, and the above content is for reference
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