2N5246_D74Z

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The 2N5246_D74Z is a small signal RF field effect transistor (FET) used mainly for antenna and frequency manipulation. It is a metal-oxide-semiconductor (MOS) FET with an N-channel design and is part of the JFET family (junction field effect transistor) due to its junction construction. The 2N5246_D74Z is a high-frequency small signal transistor composed of a silicon or other semiconductor material. Its main purpose is to manipulate frequencies, transistors and radio-frequency power amplifiers. This transistor has very high input impedance and high gain characteristics due to its structure as well as its high linearity.

The main application area of the 2N5246_D74Z is in controlling various types of frequency devices for various applications such as low power radio-frequency power amplifiers, mixer applications, high-frequency oscillators, antenna matching circuits and much more. The device can also be used in control equipment for RF AC generators, RF switching stages and RF antenna modulators. It is also suitable for use in a variety of different modulation techniques such as FM, AM and PM.

The 2N5246_D74Z is designed to operate in the frequency range of 800MHz to 1000MHz. This particular device has a maximum drain current of 8mA and maximum drain-source voltage of 20V. It also has a low breakdown voltage and low gate source current. It is available in a dual-gated design, which is highly suitable for applications that require high gain as well as low capacitance. This feature makes it a very cost effective device and it is highly efficient when used in high frequency applications.

The working principle behind the 2N5246_D74Z is that when voltage is applied to the gate, it creates enough negative charge on the drain side of the device to generate a conducting channel. This channel can prevent the current from flowing from source to drain. The drain current is further influenced by the voltage applied to the gate. When the voltage at the gate is raised, the conductivity of the channel increases. On the other hand, when the voltage applied at the gate is lowered, the channel is eliminated and no current can pass from the drain to the source.

The 2N5246_D74Z can be used in a variety of RF applications such as high frequency power amplifiers, FM transmitters, radio receivers, and radio modulation systems. It is also suitable for use in medium power radio-frequency applications such as mixing stages, high frequency oscillators and antenna matching. The device has excellent linearity and high gain features, which makes it a perfect choice for many applications. Additionally, its low gate current and low gate-source capacitance make it a cost effective solution for frequency control applications.

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