Allicdata Part #: | 2N5237-ND |
Manufacturer Part#: |
2N5237 |
Price: | $ 10.23 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | NPN TRANSISTOR |
More Detail: | Bipolar (BJT) Transistor |
DataSheet: | 2N5237 Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 9.30006 |
Series: | * |
Part Status: | Active |
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2N5237 is a NPN silicon epitaxial planar transistors designed for use in industrial and consumer applications. The transistor’s flat-package design and its high gain, low saturation voltage make it an excellent choice for applications such as voltage regulators, converters, motor control, and actuator control. Additionally its high power dissipation capability makes it well suited for high-voltage and high-temperature applications.
The 2N5237’s application fields are mainly limited to analog circuits. It can function as an amplifier, converter, regulator, or a driver in automotive, medical, and industrial electronics. The 2N5237 can also be used in PC systems or as an interface between digital and analog circuits in applications such as printers and imaging scanners. For example, the transistor is often used to buffer the line voltage, control the firing of a spark plug, or as a power amplifier in pulse-width modulated power supply systems.
The 2N5237 is a bipolar junction transistor (BJT) that uses P-type semiconductor material between two N-type layers. This makes it an NPN type transistor. In order to understand how it works, we can look at the basic structure of the BJT. The transistor contains two terminals called the emitter and the collector, and a third terminal called the base. A BJT is a three-terminal device having three layers of semiconductor material, together with two conduction channels, each separated by a thin layer of insulator. This structure allows for current to flow through one of the channels (the emitter-collector path), while the other channel (the base-emitter path) selectively modulates it. The collector current is proportional to the base current, and the current amplification factor (β) is a measure of the transistor’s current gain.
The working principle of the 2N5237 is based on the base-emitter current flow. When the base-emitter voltage exceeds the forward voltage threshold, current starts to flow from the emitter to the collector. This current is called the collector current, and is proportional to the base current. The base-emitter voltage and the base current in turn determine the collector current, and the collector current determines the voltage drop across the transistor, which is generally determined by the Collector-Emitter Voltage (Vce). The collector-emitter voltage is controllable by the base current, which allows the 2N5237 to be used as an amplifier, or an analogue switch.
In summary, the 2N5237 is a NPN silicon epitaxial planar transistors designed for analog circuits. It is a bipolar junction transistor (BJT) that uses P-type semiconductor material between two N-type layers. The working principle of the 2N5237 is based on the base-emitter current flow, and it can be used as an amplifier, converter, regulator, or a driver in various applications such as automotive electronics, medical systems, industrial electronics, and printing systems.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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