2N5246_J35Z

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	N-Channel JFET
Frequency:	--
Gain:	--
Current Rating:	7mA
Noise Figure:	--
Power - Output:	--
Voltage - Rated:	30V
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:	TO-92-3
Base Part Number:	2N5246

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The 2N5246_J35Z is a VHF, −30V, N−Channel Junction Field Effect Transistor (JFET). This type of non-destructive semiconductor is usually used for the purpose of signal amplification and switch control in radio frequency (RF) applications. It possesses an intrinsic characteristic of high input impedance and low output impedance, which makes it suitable for use in RF applications where voltage signals are being transferred. The transistor\'s relatively high gain further augments its performance in such applications.

Application Fields

The 2N5246_J35Z is capable of functioning in several different application fields. Its high-performance characteristics allow it to be used in RF amplifier circuits, ultra-low noise amplifiers, and oscillator circuits. Its low-noise characteristics and high input impedance also make it suitable for use in audio amplifiers, receiver front ends, and other systems. Its low capacitance further enhances its performance in these circuits. In addition, the transistor is suitable for use in low-noise linear amplifier circuits for test and instrumentation purposes. When connected in an RF circuit, the transistor\'s low noise characteristic enables it to be used in wireless communication systems and other applications.

Working Principle

The 2N5246_J35Z transistor works on the principle of depletion-mode and enhancement-mode operation. In the depletion-mode, by increasing the negative gate voltage, the resistance between the drain and the source terminals increases, which allows the drain current to be reduced. By increasing the positive gate voltage, the resistance between the drain and source terminals decreases and the drain current increases.The enhancement-mode operation works in the opposite manner; by increasing the negative gate voltage, the drain current increases and by increasing the positive gate voltage, the drain current decreases. The transistor also exhibits a low input bias current and is immune to thermal runaway. The depletion-mode and enhancement-mode operations are applicable to both gains, i.e. high-gain and low-gain amplifiers. The transistor provides an excellent frequency response, with a maximum operating frequency at about 350MHz, and a maximum gain at 150MHz. Moreover, it is characterized by a high level of linearity and very low-noise performance.

Conclusion

The 2N5246_J35Z is an excellent transistor for RF circuits. It has a wide operating range, with a maximum operating frequency of 350MHz, and a maximum gain at 150MHz. It has a high level of linearity and very low-noise performance. Its low capacitance further enhances its performance in these circuits. The 2N5246_J35Z is suitable for use in low-noise linear amplifier circuits,RF amplifier circuits, ultra-low noise amplifiers, oscillator circuits, audio amplifiers, receiver front ends, and other systems.

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