2N5247

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The 2N5247 is a dual high-power NPN silicon transistor. It features an exceptionally high collector-emitcurrent amplitude and an increased beta ratio at the higher currents. This transistor can be used in a variety of applications, ranging from radio frequency (RF) to consumer electronics. Its high-rated current and large power dissipation allow for operation in rugged environments and long-term operation over wide temperature ranges.

2N5247 application field

The 2N5247 has various applications, such as televisions, automotive electronics, audio amplifiers and RF amplifiers. The transistor can operate in mid- and high-power applications. It is designed for use in developing Class B, C and D amplifiers for radio systems. Additionally, it can be used for different switching applications, such as power switching and switching circuits.

2N5247 working principle

The 2N5247 is an NPN bipolar transistor. It belongs to the silicon family and consists of three layers of semiconductor material – the collector, base and emitter. The collector layer carries the current when the transistor is active, while the base layer consists of diodes to control the current flow between the collector and emitter. When current is sent to the base layer, it switches on the transistor and allows current to flow between the collector and emitter. When the current is removed, the bases switch off the transistor, preventing current from crossing the collector to the emitter.

The 2N5247 is a high-power NPN silicon transistor. Its collector-emitcurrent amplitude is high, meaning that it can switch on and off quickly when current is applied to the base. It is also capable of high power dissipation – the amount of power it can handle before dissipating. It is designed to operate in a variety of environments and temperatures for long period of times. It is ideal for radio frequency systems, power switching, and consumer electronics.

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