2N5245_J35Z

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2N5245_J35Z is a semiconductor device which belongs to the Transistors – FETs, MOSFETs – RF classification. The device features an N-type Junction Field Effect Transistor (JFET) which works by modulating the voltage dependent current in a substrate and between an output and a control terminal by providing a gate to source voltage.

The device is usually employed in high-frequency, low-noise amplifier (LNA) settings, especially in RF and microwave applications. The device typically operates at frequencies up to 40GHz and has a low noise figure (NF) of around 7dB.

The main application of the device is in switching and amplifying circuits, and it performs similar to a bipolar junction transistor although due to the gate-drain distance and higher breakdown voltages, it usually has a higher cutoff frequency. When compared to normal Metal–oxide–semiconductor field-effect transistor (MOSFET) devices, the 2N5245_J35Z has typically higher power handling capability.

The 2N5245_J35Z is created using the junction gate process, where a P-type gate is provieded and a layer of N-type material is doped over the main body. This device has a P-type drain and a source connected through a P-type epi layer. This junction forms the channel where the gate voltage can modulate the current between the drain and the source.

The working principle of the 2N5245_J35Z involves supply of a gate to source voltage VGS, which then creates a drain to source current of IDS. The device is made to amplify signals, so it doesn\'t work well with static voltages, and works better with an AC signal for example. The drain current is then varied by the voltage applied, and this movement is created by an electric field that occurs between the source and the drain.

The device is generally used as a low-noise amplifier, especially in applications that require a low NF. For example, the device can be employed in low-noise receivers, amplifiers and other circuits where a combination of gain, bandwidth and low noise is required. The device can also be used in switching and amplifier circuits, low-noise oscillators, low-distortion RF circuits and as preamplifiers.

In summary, the 2N5245_J35Z is a semiconductor device belonging to the Transistors – FETs, MOSFETs – RF classification. It is mainly used in high-frequency, low-noise amplifier settings, especially in RF and microwave applications. The device has a P-type drain and source connected to a P-type epi-layer providing a voltage dependent current between the source and drain. It is mainly used for low-noise amplifiers and switching-amplifying circuits, and other RF circuits where a combination of gain, bandwidth and low noise is required.

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