2N5210NMBU Allicdata Electronics
Allicdata Part #:

2N5210NMBU-ND

Manufacturer Part#:

2N5210NMBU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 50V 0.1A TO-92
More Detail: Bipolar (BJT) Transistor NPN 50V 100mA 30MHz 625mW...
DataSheet: 2N5210NMBU datasheet2N5210NMBU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100µA, 5V
Power - Max: 625mW
Frequency - Transition: 30MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: 2N5210
Description

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2N5210NMBU transistors belong to the category of single transistors (Bipolar Junction Transistor or BJT). This type of transistor consists of three layers of semiconductor material, namely PNP or NPN type. They are designed for high voltage and power applications and are typically used for switching applications, amplification, and protection purposes.

Despite being one of the most commonly used transistors in electronics, 2N5210NMBU transistors still require careful consideration when used in high voltage and power applications due to their superior gain and current ratings. The majority of circuit diagrams that use this type of transistor will typically be featured around the PNP and NPN regions.

2N5210NMBU transistors are available in a variety of packages, including TO-92, TO-3, and SOIC. Each package type provides various features, such as its pinout, collector voltage, base voltage, as well as its overall power capacity. The TO-92 package is the most common and is often used in audio signal circuits, while the more expensive TO-3 packages are usually used in high voltage power applications.

The amplifier application of 2N5210NMBU transistors is one of its major use. It is designed for amplifying high-frequency switching signals, such as the ones used directly in the control of an electronic circuit’s speed or temperature. For this purpose, the 2N5210NMBU transistors are arranged in a Darlington configuration, which helps boost the overall voltage gain and improves power efficiency.

In terms of protection, 2N5210NMBU transistors can also be used to reduce overvoltage and undervoltage conditions that can occur in various applications. This type of transistor responds quickly to changes in the input voltage, so it can be used as an effective switch to prevent damage to other components.

In addition, 2N5210NMBU transistors are also used to provide switching capability in power supplies, such as voltage and current regulators. This type of transistor is typically used to regulate the output current rather than the output voltage. It also features a low collector-emitter saturation voltage, which helps reduce power loss in the circuit.

When choosing the correct 2N5210NMBU transistor for a given application, it is important to take into consideration the voltage, current, and power requirements of the application, as well as the thermal and environmental conditions in the application. This will ensure that the transistor provides reliable performance, as well as a long expected service life.

The specific data is subject to PDF, and the above content is for reference

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