2N5210

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

A 2N5210 transistor is an electronic device that is known as a BJT, which stands for bipolar junction transistor. It is specifically a single type, which is also known as a single BJT. As a single BJT, it operates on the principle of current flowing between two differently doped semiconductor materials, one p-type and one n-type. As a transistor, it is a composite three-terminal device, formed from a single semiconductor layer, either n-type indirect or p-type direct, sandwiched between two p-type layers known as the base and the collector. The base and collector are insulated from each other by a thin layer of oxide and their electrical connection is made via a wirebond.

2N5210 transistors are widely used in analogue and digital electronic circuits of all types. The most common application is in power switching and amplifier circuits, although they can also be used in detection and other signal processing roles. As transistors are three-terminal devices, each one is defined by three connections, the base, collector and emitter. The current conduction between the base and collector is controlled by a small current flowing between the base and emitter, and the transistor behaves like an electrically-controlled switch, in which the current from the collector is either on or off.

The working principle of the 2N5210 transistor is based on the principle of an amplifier. In fact, it amplifies current, voltage and power. When a voltage is applied to the base of the transistor it is amplified at the collector and emitter terminals. The amplification of current, voltage and power is different for each type of transistor and is dependent on the type of transistor. To achieve the best performance, the voltage should be adjusted to the right level for the application.

2N5210 transistors have a maximum amplitude frequency of 30MHz, a maximum capacitance of 0.5pF, an operating voltage of 25V, a maximum collector current of 800mA, a minimum collector-emitter saturation voltage of 0.2V and a minimum width-length ratio of 2. They can also handle high temperature applications, making them suitable for use in applications such as high-frequency switching, in which the performance of the circuit must be maintained even in an environment with a high temperature.

The 2N5210 transistor is a very useful device which allows for precision control of current and voltage. It can be used as an amplifier, as a switch in power electronics, to achieve switching between loads, or to provide signal conditioning for signal processing in analogue circuits. It is available in a range of sizes, shapes and designs, making it suitable for a wide range of applications. It is a reliable, low cost device which has been in use since the 1970s, when it was first introduced.

The specific data is subject to PDF, and the above content is for reference