2N5210TF Allicdata Electronics
Allicdata Part #:

2N5210TF-ND

Manufacturer Part#:

2N5210TF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 50V 0.1A TO-92
More Detail: Bipolar (BJT) Transistor NPN 50V 100mA 30MHz 625mW...
DataSheet: 2N5210TF datasheet2N5210TF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100µA, 5V
Power - Max: 625mW
Frequency - Transition: 30MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: 2N5210
Description

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2N5210TF Application Field and Working Principle

The 2N5210TF is a tiny silicon NPN transistor that was developed by Philips Semiconductors in the 1990s. As a result, it is widely used in a variety of electronics applications. It is characterized by its small size and low power consumption. In addition, it has large number of features that make it attractive for a variety of applications such as microwave communication, high-frequency switching circuits, and military applications.

The 2N5210TF is a single bipolar transistor, also known as a BJT (bipolar junction transistor). It consists of three connections between the three terminals which are the base, the emitter, and the collector. The base forms the control element in the transistor, the emitter injects the charge carriers into the transistor system, and the collector is the output of the transistor. When the voltage between the base and emitter is increased, the current between the collector and emitter will increase proportionally, producing the amplification effect that is characteristic of a transistor.

2N5210TF Applications

The 2N5210TF transistor is used in a wide variety of electronics applications, including mechanical and electronic switch devices, relay drivers, high frequency switching circuits, and others. Due to its small size, this transistor can be used in even the most compact devices, such as portable electronics and cell phones. In addition, its low power consumption makes the transistor an ideal choice for battery-powered devices. The transistor is also suitable for use in the production of microchips, and can be used in a variety of logic circuits such as transmission gates, logical gates, and decoders.

2N5210TF Working Principle

As mentioned above, the 2N5220TF transistor is a single bipolar transistor. When voltage is applied to the base, it produces a small current at the collector, which is amplified by the transistor. The base-emitter current of the 2N5210TF can be adjusted by varying the voltage between the base and emitter, allowing it to be used as an amplifier or oscillator. Additionally, its low current requirement and low power consumption make this transistor an ideal choice for small devices that require minimal power consumption.

In a nutshell, the 2N5210TF is a tiny silicon NPN transistor widely used in a variety of electronics applications. It is characterized by its small size and low power consumption and is used in mechanical and electronic switch devices, relay drivers, high frequency switching circuits and in production of microchips. As a single bipolar transistor, it operates by controlling the current between the collector and emitter and is capable of producing an amplified effect, making it an ideal choice for amplifiers, oscillators, and other applications that require low power consumption.

The specific data is subject to PDF, and the above content is for reference

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