2N6034 Allicdata Electronics
Allicdata Part #:

2N6034OS-ND

Manufacturer Part#:

2N6034

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP DARL 40V 4A TO225AA
More Detail: Bipolar (BJT) Transistor PNP - Darlington 40V 4A ...
DataSheet: 2N6034 datasheet2N6034 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Power - Max: 40W
Frequency - Transition: --
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-225AA
Base Part Number: 2N6034
Description

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Transistors - Bipolar (BJT) - Single

The 2N6034 is a high-voltage NPN silicon power transistor with a voltage rating of 600 volts and a current rating of 75 watts. It is intended for applications such as low-noise amplifier, output stages and various switching applications. Furthermore, it is also often used in applications requiring high gain, such as industrial controls and power supplies.

The 2N6034 is a bipolar junction transistor (BJT), enabling it to switch and amplify electrical signals. It consists of three layers of doped semiconductor material, namely two "emitter" and two "collector" layers. These layers are connected by a third layer known as the base. The base layer is of different polarity to the emitter and collector layers and acts as a control element, directing current flow or amplification between emitter and collector.

The working principle of the 2N6034 can be described in two stages: the forward biased state and the reverse biased state. When the base is "forward biased" with a positive voltage, it acts like a closed switch allowing current to flow from the emitter to the collector. This creates an amplification effect in the charge carriers that can be used to apply power or energy to a load. Then when the base is "reverse biased" with a negative voltage, it acts like an open switch and does not allow current to flow from the emitter to the collector. As a result, power or energy is not applied to the load.

In addition, the 2N6034 has temperature and power rating superior to many power transistors currently on the market. This is due to its robust design, which includes the use of thick-film technology to ensure reliable performance and low heat generation. Furthermore, its durable construction makes it suitable for harsh environments, such as exposure to elements, shock and vibration.

Overall, the 2N6034 is a versatile and reliable transistor that is suitable for a range of applications, such as low-noise amplifier stages, output stages, switching, industrial controls, and power supplies. In addition, it can be used in harsh, outdoor environments due to its robust design and temperature- and power-rating.

The specific data is subject to PDF, and the above content is for reference

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