2N6038G Allicdata Electronics
Allicdata Part #:

2N6038GOS-ND

Manufacturer Part#:

2N6038G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN DARL 60V 4A TO225AA
More Detail: Bipolar (BJT) Transistor NPN - Darlington 60V 4A ...
DataSheet: 2N6038G datasheet2N6038G Datasheet/PDF
Quantity: 1961
Stock 1961Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Power - Max: 40W
Frequency - Transition: --
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-225AA
Base Part Number: 2N6038
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Because of their superior switching and amplification capabilities, transistors are widely used in many electronic applications. The 2N6038G is a PNP bipolar junction transistor (BJT) designed for general purpose use in low voltage applications. This transistor is typically used in amplifier circuits, switching circuits, and relay switching circuits. It has a wide range of applications, such as audio, telecom, and instrumentation.

Working Principle

In a PNP transistor, current flows from the collector to the emitter. The base is used to control the amount of current flowing from the collector to the emitter. When larger voltages are applied to the base, more current passes through the transistor, allowing more current to flow between the collector and the emitter. This is known as the transistor\'s amplification feature. It can be used to amplify signals or to create switching circuits.

The 2N6038G has an emitter-base breakdown voltage of 5V, collector-base breakdown voltage of 11V, collector-emitter breakdown voltage of 10V, and total power dissipation of 0.625W. The maximum collector-emitter voltage is 2V and the collector-base voltage is 4V. The maximum Collector Current (Ic) is 8A, and the maximum Base-Emitter Voltage (Vbe) is 5V.

Application Field

The 2N6038G is used in a variety of electronic applications, including amplifier circuits, switching circuits, and relay switching circuits. It is especially well-suited for use in audio, telecom, and instrumentation applications. Some examples include amplifier and audio stages, switching circuits for medical and civilian electronics, and signal amplification and signal conditioning applications.

The 2N6038G is a versatile transistor that is capable of being used in many different circuits. It is a reliable and cost-effective solution for low voltage applications. As such, it is a popular choice among many design engineers and hobbyists.

In addition to its use in amplifier, switching, and relay switching circuits, the 2N6038G can be used in a number of other applications such as in speed control circuits and in power supplies. The transistor can also be used as a switch for motors, solenoids, and other DC loads. It is ideal for use in low voltage applications, where higher voltage transistors may not be suitable.

The 2N6038G is an extremely versatile transistor and can be used in a wide range of applications. Its reliability and affordability make it the ideal choice for many low voltage applications.

The specific data is subject to PDF, and the above content is for reference

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