2N6040 Allicdata Electronics
Allicdata Part #:

2N6040OS-ND

Manufacturer Part#:

2N6040

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP DARL 60V 8A TO220AB
More Detail: Bipolar (BJT) Transistor PNP - Darlington 60V 8A ...
DataSheet: 2N6040 datasheet2N6040 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 2V @ 16mA, 4A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Power - Max: 75W
Frequency - Transition: --
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Base Part Number: 2N6040
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

A 2N6040 is an NPN silicon-based transistor commonly used in the fields of consumer electronics, automotive, and industrial technology. This type of transistor is part of the bipolar junction transistors (BJTs) family and falls under the single category. It is also known as a dual diffused-displacement transistor (DDC).

This type of transistor has two layers of silicone substrate, hence also referred to as “double-diffused”. The first layer is slim and can hold a large number of electrons, while the second layer is the base of both the emitter and the collector. It is a surface-mountable transistor meaning it can be attached directly onto the board or printed circuit board (PCB) using a soldering iron.

In terms of performance, the 2N6040 transistor can amplify, switch, and regulate electrical signals for various applications such as electric, automotive, and telecommunication products. It can also be used to build amplifiers, flip-flops, switches, interrupters, logic gates, and even function generators.

The working principle behind the 2N6040 is based on the principle of current flow. As electrons venture from the emitter to the collector, the transistor can control the amount of current passing through it by adjusting its base. By doing so, the current that passes through the collector is amplified. This can be done by producing a low-resistance path to the collector or by producing a high-resistance path to the emitter.

The amount of current passing through the transistor is also regulated by the gain of voltage. Higher voltage results in more current which is then regulated by the base. This makes it suitable for applications requiring a variable amount of current, such as those found in power supply circuits and amplification.

In terms of its features, the 2N6040 has a maximum breakdown voltage of 40V, a current gain of between 40 and 70, and an operating frequency range between 2 and 10MHz. Moreover, it has a maximum power rating of 0.5W, meaning it can reliably be used in applications such as power conversion, as well as in radiotelephones and base stations.

In conclusion, the 2N6040 is a single, NPN silicon-based transistor and is commonly used in a variety of fields. It amplifies, switches, and regulates electrical signals by controlling the current passing through it by adjusting the base and the voltage gain. It has a maximum breakdown voltage of 40V, a current gain of between 40 and 70, and an operating frequency range between 2 and 10MHz. Furthermore, it has a maximum power rating of 0.5W, making it suitable for power conversion and radiotelephones.

The specific data is subject to PDF, and the above content is for reference

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