2SC5001TLQ Allicdata Electronics
Allicdata Part #:

2SC5001TLQTR-ND

Manufacturer Part#:

2SC5001TLQ

Price: $ 0.30
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS NPN 20V 10A SOT-428
More Detail: Bipolar (BJT) Transistor NPN 20V 10A 150MHz 1W Sur...
DataSheet: 2SC5001TLQ datasheet2SC5001TLQ Datasheet/PDF
Quantity: 1000
1 +: $ 0.30000
10 +: $ 0.29100
100 +: $ 0.28500
1000 +: $ 0.27900
10000 +: $ 0.27000
Stock 1000Can Ship Immediately
$ 0.3
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
Transistor Type: NPN
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 4A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Power - Max: 1W
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: CPT3
Base Part Number: 2SC5001
Description

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Introduction

The 2SC5001TLQ is a general-purpose NPN transistor manufactured by Toshiba. This bipolar junction transistor is typically used as a switching or amplification device, is designed for use in low-noise applications and available in a low-noise plastic package. The maximum collector current rating is 50 mA and the maximum collector-emitter voltage is 30V. It has a maximum power dissipation of 100mW and a maximum frequency of 1GHz.

Application Field and Working Principle

The 2SC5001TLQ is used in various applications such as switches, amplifiers, oscillators, and power control circuits. This transistor can handle up to 50 mA of collector current, which makes it suitable for applications that require strong switching or amplification capability. The 2SC5001TLQ has a low noise characteristic, which makes it ideal for low-noise applications such as audio amplifiers or communication devices. The 2SC5001TLQ is a Bipolar Junction Transistor (BJT) based on NPN technology and is classified as a single transistor. NPN transistors are formed by combining three layers of semiconductor material: one P-type and two N-type. A high current arises from the minority carriers when an external voltage is applied to the positive and negative terminal. This voltage controls the current flow between the collector and emitter, which produces an amplified signal when used as an amplifier. When used as a switch, the transistor can open or close a circuit when an appropriate voltage is applied to it. The 2SC5001TLQ has an Envelope FET™ Package, which means that it can be used in tight spots. It is available in a variety of sizes and shapes, so you can choose the one which best fits the application. The package also contributes to the 2SC5001TLQ’s low noise characteristics, as it helps to reduce the interference between circuit components.

Conclusion

The 2SC5001TLQ is a suitable choice for applications which require high power handling and low-noise performance. It is a NPN Bipolar Junction Transistor (BJT) classified as a single transistor and has a maximum power dissipation rating of 100mW. It is available in an envelope FET™ Package, which allows it to fit in tight spaces while providing low noise performance. The 2SC5001TLQ is a popular choice for applications such as switches, amplifiers, oscillators and power control circuits. Overall, the 2SC5001TLQ is an excellent choice for applications that require low-noise performance, high power handling capability, and a wide range of sizes and shapes to choose from.

The specific data is subject to PDF, and the above content is for reference

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