2SC5053T100Q Discrete Semiconductor Products |
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Allicdata Part #: | 2SC5053T100QTR-ND |
Manufacturer Part#: |
2SC5053T100Q |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS NPN 50V 1A SOT-89 |
More Detail: | Bipolar (BJT) Transistor NPN 50V 1A 150MHz 2W Surf... |
DataSheet: | 2SC5053T100Q Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 500mA, 3V |
Power - Max: | 2W |
Frequency - Transition: | 150MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | MPT3 |
Base Part Number: | 2SC5053 |
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The 2SC5053T100Q is a transistor type device that is classified as a single bipolar junction transistor (BJT). This transistor is used to switch electronic signals from one component to another or amplify electronic signals. 2SC5053T100Q is mainly used for data transmission, amplification circuits and other high frequency applications.
The 2SC5053T100Q has a DC current gain, hfe, of 80-200. Its collector-base breakdown voltage is 180V, emitter-base breakdown voltage is 5V and collector-emitter breakdown voltage is also 5V. Its total power dissipation is 0.1 Watts and its DC current is 3A. Its maximum operating frequency is 200MHz. The device also has a maximum collector-emitter voltage of 15V, which adds extra stability.
The 2SC5053T100Q has many applications in different areas. It is mainly used as a Switching transistor for communication, data transmission and amplification circuits. It can also be used as a driver transistor in electronic ballasting applications, TV sets, active speakers, AC adapters and so on. It is also used in oscillators, power supply circuits and power amplifiers.
The working principle of the 2SC5053T100Q is based on the bipolar junction transistor (BJT) theory. According to this theory, the transistor is a three-terminal semiconductor device made up of two P-type and one N-type semiconductors. A small base current is used to control a larger collector-emitter current. When the base current is switched on, current flows from the emitter to the collector. In this way, the transistor acts as a switch or amplifier.
To summarize, the 2SC5053T100Q is a single bipolar junction transistor that can be used for switching and amplification circuits. It has a DC current gain of 80 to 200 and its maximum operating frequency is 200MHz. It is mainly used for data transmission, amplification circuits and other high frequency applications like oscillators and power amplifiers. The working principle of the device is based on the bipolar junction transistor theory, which uses a small base current to control a larger collector-emitter current.
The specific data is subject to PDF, and the above content is for reference
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