2SC5930(T2MITUM,FM Allicdata Electronics
Allicdata Part #:

2SC5930(T2MITUMFM-ND

Manufacturer Part#:

2SC5930(T2MITUM,FM

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS NPN 1A 600V SC71
More Detail: Bipolar (BJT) Transistor NPN 600V 1A 1W Through H...
DataSheet: 2SC5930(T2MITUM,FM datasheet2SC5930(T2MITUM,FM Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 600V
Vce Saturation (Max) @ Ib, Ic: 1V @ 75mA, 600mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 5V
Power - Max: 1W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-71
Supplier Device Package: MSTM
Description

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The 2SC5930(T2MITUM,FM) is a bipolar single transistor made by Toshiba. It is used for high frequency power amplification applications, thanks to its high current carrying capacity, excellent noise rejection ratio, good isolation voltage, and temperature characteristics. This transistor is also used in TV sound receivers and other devices where sound is amplified. It is also well suited to optical communication systems, as it offers superior performance in high frequency signals.

In the 2SC5930(T2MITUM,FM)transistor, there are three terminals called emitter, base, and collector. The emitter is the terminal which emits electrons. The base functions as a pathway for the electrons, while the collector collects the electrons. To turn the transistor on, a small current passes through the base. When this current is increased, the amount of current flowing from the emitter to the collector also increases. This is called the base aspect ratio, and it is responsible for the increase in current through the transistor. In addition, a small amount of voltage applied to the base controls the amount of current that is allowed to flow through the transistor.

The 2SC5930(T2MITUM,FM) transistor is ideal for use in high frequency power amplification applications due to its high current carrying capacity and high frequency response. It offers excellent noise rejection ratio and good isolation voltage, as well as temperature characteristics. Additionally, because of the gate to source capacitance, the transistor has superior performance in high frequency signal transfer. The insulation resistance of the transistor is also very high, making it suitable for use in low voltage applications.

The 2SC5930(T2MITUM,FM) transistor also has a high breakdown voltage and low leakage current, making it suitable for use in high voltage and high frequency applications. The transistor has good transition times, making it suitable for use in pulse operation applications. Additionally, the transistor has low input capacitance, making it suitable for use in low noise circuits.

The 2SC5930(T2MITUM,FM) transistor is a solid state device and can be used for both amplifier and switch applications. In amplifier applications, the collector current is amplified. The transistor is suitable for use in medium to low power applications. In switch applications, the transistor acts as a switch and it is used for on/off control for high-frequency operations such as switching power supplies and circuit breakers. The transistor also has high frequency stability and has low parasitic effects.

The 2SC5930(T2MITUM,FM) transistor can be used in audio-frequency amplifiers and is suitable for receiver, signal processor, and audio frequency output circuits. This device can handle high signal levels and has a low distortion rate. Additionally, the device offers low output resistance, good signal coupling, and low noise. The transistor is also suitable for audio signal amplification, signal converter, and low voltage amplifier.

In conclusion, the 2SC5930(T2MITUM,FM) is a single bipolar transistor that is suitable for high frequency power amplification applications. It has good characteristics in terms of current carrying capacity, noise rejection ratio, isolation voltage, and temperature performance. The device can also be used for audio frequency amplifiers and for switch applications. Overall, the device is an excellent choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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