Allicdata Part #: | 2SC5731T100Q-ND |
Manufacturer Part#: |
2SC5731T100Q |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS NPN 30V 2A SOT-89 |
More Detail: | Bipolar (BJT) Transistor NPN 30V 2A Surface Moun... |
DataSheet: | 2SC5731T100Q Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | -- |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | -- |
Frequency - Transition: | -- |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | MPT3 |
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The 2SC5731T100Q is a high-voltage, high-current silicon NPN transistor designed to meet the demanding requirements of automotive and industrial applications. It\'s suitable for use in a variety of applications such as relay drivers, inverters, high-speed switching, and switching power supplies.
The 2SC5731T100Q is a bipolar (BJT) transistor, specifically a single transistors type. The device consists of three terminals (collector, base, and emitter) and requires an input current (Ib) to drive the transistor into its active region.
The transistor is configured in an NPN type, meaning that it has an N-type (negative carriers) semiconductor between two layers of P-type (positive carriers). The base terminal of the transistor is connected to the base region, which is a layer of lightly N-doped (more positive charges) material. This allows the transistor to be switched from active to cutoff by controlling the amount of I b current.
In 2SC5731T100Q application, the collector current Ic is proportional to the base current Ib when the transistor is in its active region. When the transistor is turned off, any current between the base and collector flows into the emitter, returning to the source, with no current between the collector and emitter. This feature makes the 2SC5731T100Q an ideal power switching device in many types of circuits.
The device can withstand high-voltage and high-current applications which make it suitable for automotive, industrial and consumer applications. The 2SC5731T100Q is also designed to handle high-frequency switching and generates very low levels of noise and has a high-speed operation.
The 2SC5731T100Q can handle up to 100V of peak-to-peak voltage, has a collector current rating of up to 3 amps, and has a maximum power dissipation rating of 30 watts, making it suitable for applications such as power supplies, motor control, and other power converting applications.
The 2SC5731T100Q is also a long-life device with a maximum junction temperature rating of 150̊C, meaning it can withstand long-term operation at higher temperatures than some other transistors.
The 2SC5731T100Q offers advantages in a number of industrial and automotive applications because of its high-voltage, high-current ratings. It is suitable for use in applications such as relay drivers, inverters, DC-DC converters, and other power switching applications, and offers benefits in power efficiency, reliability, and cost.
The specific data is subject to PDF, and the above content is for reference
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