2SC5731T100R Allicdata Electronics
Allicdata Part #:

2SC5731T100R-ND

Manufacturer Part#:

2SC5731T100R

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS NPN 30V 2A SOT-89
More Detail: Bipolar (BJT) Transistor NPN 30V 2A Surface Moun...
DataSheet: 2SC5731T100R datasheet2SC5731T100R Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: --
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: --
Frequency - Transition: --
Operating Temperature: --
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: MPT3
Description

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Transistors are integrated circuit components that primarily act as switches and amplifiers, and are composed of three layers of semiconductor material called the base, the collector and the emitter. 2SC5731T100R transistors belong to the class of Bipolar Junction Transistors (BJT), in particular Single type because it has two PN junctions.

2SC5731T100R is a silicon NPN transistor for audio and high frequency applications. This device features low collector-emitter saturation voltage, high breakdown voltage and low noise. The rated collector current is 100 mA, while the collector-emitter voltage can range from 50 V DC to 250 V DC. It is suitable for various analog applications, such as general purpose amplifier stages, oscillators, motor control and interface.

2SC5731T100R is based on a three terminal structure, with the conventional emitter, base and collector connections, each of them connected to a semiconductor layer. When a current flows through the emitter side, a voltage drop is created. This voltage further makes an electric field over the base layer, which causes hole injection from the emitter to the base region, allowing for the current to flow from collector to the emitter.

The current gain of this device is determined by the ratio between the collector current (IC) and the base current (IB). The transistor collector current is proportional to the base current, thus the higher the current at the base, the higher at the collector.

For a linear operation, the transistor can operate within a current gain range of 60-240. When the collector current is increased, the impedances with turn on the current gain decreases and finally, the output current decreases.

2SC5731T100R can be used in a variety of circuit boards, such as amplifiers, audio circuits, optoisolators and motor controls. It is commonly used to drive an amplifier\'s output stage, construct Class A and B amplifiers and generate digital/analog signals. It is also extensively used in Servo motor control, digital logic and interface devices.

2SC5731T100R transistors have some drawbacks related to their performance characteristics. For example, the current gain is dependent on the collector current, thus decreases when the collector current is increased. Additionally, the constant base current should be large enough so that the base-collector junction does not enter into saturation.

In conclusion, 2SC5731T100R are highly efficient, cost-effective transistors that can be used in a variety of applications with excellent performance characteristics. Although they have some drawbacks related to their performance, these transistors provide reliable and robust operation, which makes them ideal for analog, digital, and audio applications.

The specific data is subject to PDF, and the above content is for reference

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