2SC5659T2LN

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

2SC5659T2LN Application Field and Working Principle

The 2SC5659T2LN is a two layer PNP bipolar junction transistor, or BJT, from the Transistors - Bipolar (BJT) - Single category. This BJT transistors are manufactured by Toshiba and are used for different switch and linear amplification applications. BJTs are well-suited as an amplifier due to their lower collector/base gain compared to most other amplification devices. In addition, because of its low collector/base gain, the 2SC5659T2LN is ideal for applications where the signal remains linear and distortion is to be avoided.

The 2SC5659T2LN has a collector/base breakdown voltage of 60V at 25°C. This breakdown voltage, combined with its low collector/base gain of up to 8.5, makes it an ideal choice for signal amplification in environments with large voltage swings, such as in motor control circuits or other applications requiring large signal swings.

In order to understand how a transistor works, it\'s important to understand the collector, base, and emitter. The collector is the part that amplifies and carries the large current that the signal requires, while the base carries the small current signal. The emitter collects the signal from the base and is responsible for converting the small signal into the larger signal, which is then sent to the collector. The 2SC5659T2LN is designed to work with a high current, such as a motor control circuit or when a large signal amplification is required.

The 2SC5659T2LN is also designed to have a high gain. This gain, combined with its low collector/base gain of 8.5, makes it an ideal choice for signal amplification applications. The 2SC5659T2LN can provide up to 42 decibels of gain, which can be useful for amplifying small signals. Its gain, combined with its low collector/base breakdown voltage, makes it an ideal choice for amplifying signals with large voltage swings.

The 2SC5659T2LN is also reliable in harsh environmental conditions. It is designed to have a maximum operating temperature of 150°C and has a maximum storage temperature of 200°C. This ensures that the 2SC5659T2LN can be used in a variety of environments, including in equipment subjected to extreme temperatures.

The 2SC5659T2LN is ideal for linear amplification and motor control circuits due to its low collector/base breakdown voltage and its high gain. It is also designed to withstand harsh environmental conditions, making it an ideal option for applications in extreme temperatures. Thanks to its low collector/base gain, it is well-suited for applications that require a linear signal and low distortion. The 2SC5659T2LN from Toshiba is a reliable and powerful choice for a variety of low-voltage applications.

The specific data is subject to PDF, and the above content is for reference