Allicdata Part #: | 2SC5964-S-TD-E-ND |
Manufacturer Part#: |
2SC5964-S-TD-E |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 50V 3A |
More Detail: | Bipolar (BJT) Transistor NPN 50V 3A 380MHz 1.3W Su... |
DataSheet: | 2SC5964-S-TD-E Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.06156 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 290mV @ 100mA, 2A |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 100mA, 2V |
Power - Max: | 1.3W |
Frequency - Transition: | 380MHz |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | PCP |
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The 2SC5964-S-TD-E is part of a family of transistors categorized as Bipolar Junction Transistors (BJT), single. It is mainly used in power amplifiers and audio equipment, among other uses. Transistors are electronic components used to control and switch electrical current in an integrated circuit, and the 2SC5964-S-TD-E is a type of BJT, specifically a n-type (sometimes called npn) transistor.
A BJT is composed of three regions, the collector, base and emitter, and fixed junctions between the regions. The collector forms the output of the transistor and is used to pass the current, while the base is the control region of the transistor and is used to control the flow of current from the collector to the emitter. The emitter is the input region and receives current from the base. In order for the transistor to turn on, there must be sufficient current applied to the base.
The two main type of BJTs are n-type and p-type BJTs. N-type transistors, such as the 2SC5964-S-TD-E, are used in power amplifiers and audio equipment because they are able to withstand high voltage and dissipate heat more efficiently than p-type transistors. They are also more resistant to thermal and electrical breakdowns, making them an ideal choice for power applications.
The 2SC5964-S-TD-E is a npn transistor, meaning that the collector is n-type and the base and emitter are p-type. This arrangement allows for current to flow from collector to emitter when a voltage is applied to the base. When the voltage applied to the base is increased, the current flow increases as well. This type of BJT is commonly used in power applications, such as inverters and amplifiers, due to its ability to withstand high voltage and dissipate heat efficiently.
The 2SC5964-S-TD-E is capable of handling up to 200V of voltage and it is rated for up to 200mA of current. It is also able to operate at very high frequencies, up to 1 MHz, making it suitable for a wide range of applications. It is also capable of dissipating heat at a higher rate than other components, allowing it to operate in higher temperature environments.
The 2SC5964-S-TD-E is an excellent choice for power applications such as inverters, amplifiers and audio equipment because it can handle high voltage and dissipate heat efficiently. Its high-frequency operation makes it suitable for a wide range of applications and its reliability makes it an ideal choice for many electronics applications.
The specific data is subject to PDF, and the above content is for reference
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