2SC5085-O(TE85L,F)

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2SC5085-O(TE85L,F) Application Field and Working Principle

2SC5085-O(TE85L,F) is a type of bipolar junction transistor (BJT). It is typically used in RF applications such as HF amplifier and oscillator circuits. It has an excellent frequency response, low-noise performance, and high voltage gain.

The BJT is a three-terminal device composed of n-type and p-type materials. In the case of the 2SC5085-O(TE85L,F), the n-type material is silicon and the p-type material is boron doped silicon. The two basic types of BJTs are NPN and PNP, depending on how the current flows between the collector and emitter. In the case of the 2SC5085-O(TE85L,F), it is an NPN type transistor.

The 2SC5085-O(TE85L,F) has a maximum hazardous voltage rating of 20V, and has a high voltage gain of 40k-60k. The current gain of this transistor is ho, and the maximum operating frequency is up to 800MHz. It is designed to operate in low-noise and low-power applications.

The working principle of the 2SC5085-O(TE85L,F) is based on the principle of bipolar junction transistors. The input base current turns on the transistor, allowing current to flow from the emitter to the collector. The output current is proportional to the input current, and the output voltage is proportional to the input voltage, thus producing gain. This gain is dependent on many factors such as the current gain, and the bias and collector-emitter voltage.

The 2SC5085-O(TE85L,F) is suitable for use in HF amplifier and oscillator circuits, as well as for other RF applications. It has a high voltage gain and low-noise performance, and is reliable and cost effective. It is an ideal choice for those looking for a reliable, low-cost, high-performance transistor.

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