2SC5087YTE85LF Allicdata Electronics
Allicdata Part #:

2SC5087YTE85LFTR-ND

Manufacturer Part#:

2SC5087YTE85LF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS RF NPN 7GHZ 80MA SMQ
More Detail: RF Transistor NPN 12V 80mA 7GHz 150mW Surface Moun...
DataSheet: 2SC5087YTE85LF datasheet2SC5087YTE85LF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 13dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-61AA
Supplier Device Package: SMQ
Description

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The 2SC5087YTE85LF transistor is classified as a RF Bipolar Junction Transistor (BJT) device which is used in the field of radio frequency, or RF, applications. The basic purpose of the transistor is to amplify or switch radio frequency signals. The 2SC5087YTE85LF consists of three terminal branches including a collector, base, and emitter. The transistor is most commonly used as an amplifier or switch for device or circuit in which high frequency signals are being amplified or switched.

The 2SC5087YTE85LF transistor can be used in many different RF device applications, including but not limited to radio transmitters, radio receivers, RF amplifiers, RF filters, RF oscillators, and RF switching circuits. As an amplifier, it can be used to amplify very low levels of RF signals such as those generated by light-emitting diode (LED) sources. As a switch, the transistor enables devices such as receivers and transmitters to be switched on and off quickly. It can also be used to switch active elements in a circuit.

The transistor is constructed with a single layer of N-type semiconductor material. This material is used as the base in the transistor and acts as an insulator between the collector and emitter branches. The collector branch is connected to a positive voltage source, while the emitter branch is connected to a negative voltage source. The transistor is also connected to a gate input which is typically used to control the level of current flowing through the transistor.

When a small current is applied to the gate input, the transistor will allow a larger current to flow from collector to emitter. This current will increase until it reaches a certain level, which is set by the designer. This level is known as the transistor\'s cut-off voltage. When the voltage increases beyond the cut-off voltage, the transistor will stop allowing any current to flow, thus acting as a switch.

The 2SC5087YTE85LF transistor is typically used in high frequency, RF applications. It is an excellent choice for RF amplifiers and filters due to its wide frequency range and high operating temperature range. It is also very stable when exposed to large amounts of electricity due to its strong insulation qualities. These excellent characteristics make the 2SC5087YTE85LF a great choice for radio devices.

The specific data is subject to PDF, and the above content is for reference

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