| Allicdata Part #: | 2SC5231A-8-TL-E-ND |
| Manufacturer Part#: |
2SC5231A-8-TL-E |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS NPN BIPO VHF-UHF SMCP |
| More Detail: | RF Transistor NPN 10V 70mA 7GHz 100mW Surface Moun... |
| DataSheet: |  2SC5231A-8-TL-E Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Transistor Type: | NPN |
| Voltage - Collector Emitter Breakdown (Max): | 10V |
| Frequency - Transition: | 7GHz |
| Noise Figure (dB Typ @ f): | 1dB @ 1GHz |
| Gain: | 12dB |
| Power - Max: | 100mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 90 @ 20mA, 5V |
| Current - Collector (Ic) (Max): | 70mA |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-75, SOT-416 |
| Supplier Device Package: | SMCP |
Description
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2SC5231A-8-TL-E is a type of transistor belonging to the family of Bipolar Junction Transistors (BJT) that are widely used in the Radio Frequency (RF) industry. The 2SC5231A-8-TL-E is a NPN Silicon transistor that features high-frequency operation and high power gain, making it ideal for designing high-frequency circuits and amplifiers. This transistor is also adjustable and can be used in applications such as voltage regulators and power adapters.
BJT are transistors that use two-terminal elements such as PN junction diodes or metal semiconductor junctions to control the direct current (DC) flow through them. This type of transistor has two circuit configurations: common-emitter and common-collector. In the common-emitter circuit setup, the current gain or amplification of the device stems from the relative ratio between the output and the input forces.
In the case of the 2SC5231A-8-TL-E, the common-emitter configuration is used. This configuration works by using a small base current to control a much larger collector current. When the base current is increased, there is a large increase in the collector current which in turn increases the collector-emitter voltage. The voltage level of the collector-emitter can be used to control the collector current. This is the basis of the common-emitter configuration.
The common-emitter setup of the 2SC5231A-8-TL-E is different from other types of transistors because it has three pins instead of two. It has a collector, a base, and an emitter. The collector and the base are the two terminals that control the current flow, while the emitter is the third terminal which serves as the output of the device. The collector is the input of the transistor and its current depends on the base current. The base current is supplied by the base terminal.
When a voltage is applied to the two terminals of the 2SC5231A-8-TL-E, the collector current is increased. This increased current also increases the collector-emitter voltage which can be used to create a variety of effects. The key feature of the 2SC5231A-8-TL-E is its high current gain. The gain of this transistor is much higher than that of other transistors and can reach levels of up to 500. This feature makes it a good choice for high-frequency circuits and applications that require a high degree of precision.
The 2SC5231A-8-TL-E is a popular choice among RF engineers due to its high current gain and high-frequency operation. This transistor is also adjustable and can be used in applications like voltage regulators and power adapters. Thanks to its low noise and high current gain, the 2SC5231A-8-TL-E can be used in a variety of different circuits and applications.
The specific data is subject to PDF, and the above content is for reference
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