2SC5245A-4-TL-E Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	10V
Frequency - Transition:	8GHz
Noise Figure (dB Typ @ f):	0.9dB ~ 3dB @ 1GHz ~ 1.5GHz
Gain:	10dB
Power - Max:	150mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	90 @ 10mA, 5V
Current - Collector (Ic) (Max):	30mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-70, SOT-323
Supplier Device Package:	3-MCP

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Introduction to the 2SC5245A-4-TL-E

The 2SC5245A-4-TL-E is a bipolar junction transistor designed specifically for radio frequency (RF) applications. It is typically used in audio amplifiers, high frequency switching or modulating circuitry, and other RF/IF circuits. This device is designed as NPN silicon bipolar epitaxial transistor and is manufactured using a planar transistor process.

2SC5245A-4-TL-E Application Fields

The 2SC5245A-4-TL-E can be used in a wide range of applications. It is especially useful for applications where high speed, low-noise performance, low power consumption and low distortion are crucial. This can include audio amplifiers for consumer electronics, automotive applications, wireless communication, microwave instrumentation, and TV tuners/receivers, among others.

Working Principle and Construction

Bipolar junction transistors, such as the 2SC5245A-4-TL-E, are three-terminal semiconductor devices that amplify electrical signals. They operate by controlling the current flow between two terminals (the emitter and the collector terminals) depending on the voltage applied to the third terminal (the base terminal). The current flowing between the collector and emitter is modulated by the base current.Bipolar junction transistors consist of three layers of doped semiconductor material which form a depletion layer when a current flows between the collector and emitter terminals. These layers are formed into a structure called the base-collector-emitter (BCE) structure, which corresponds to the three terminals of the transistor. When a voltage is applied to the base terminal, a current between the collector and emitter is drawn, which modulates the current in the circuit. The amount of current controlled is determined by the size of the depletion layer between the collector and the base. The 2SC5245A-4-TL-E is rated for high frequency operation. It has a very low collector-emitter capacitance, allowing it to rapidly switch from one state to another with minimal signal distortion. This makes it ideal for use in high frequency signal modulation and switching applications. The 2SC5245A-4-TL-E is rated to operate over a wide range of temperatures and supply voltages, allowing it to be used in a variety of applications. It also has a low noise output, making it suitable for use in sensitive audio applications.

Summary

The 2SC5245A-4-TL-E is a high frequency bipolar junction transistor designed specifically for use in radio frequency applications. It is rated for operation over a wide range of temperatures and supply voltages and has a low collector-emitter capacitance, making it ideal for high frequency switching and modulating circuits. Its low noise output also makes it suitable for sensitive audio applications. It is typically used in audio amplifiers, high frequency switching or modulating circuitry, and other RF/IF circuits.

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