
Allicdata Part #: | 2SC5654G0LTR-ND |
Manufacturer Part#: |
2SC5654G0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS NPN 20V 1A SMINI-3 |
More Detail: | Bipolar (BJT) Transistor NPN 20V 1A 180MHz 150mW S... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Vce Saturation (Max) @ Ib, Ic: | 100mV @ 10mA, 200mA |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 100mA, 2V |
Power - Max: | 150mW |
Frequency - Transition: | 180MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-85 |
Supplier Device Package: | SMini3-F2 |
Base Part Number: | 2SC5654 |
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The 2SC5654G0L is a NPN silicon epitaxial transistor in a TO-126 package, designed for medium-power amplifier and low-frequency switching applications. This particular 2SC5654G0L device has a Collector-Emitter saturation voltage of just 0.2V, making it ideal for applications where a low operating voltage is required. The 2SC5654G0L is also a Gate-Controlled Transistor (GCT); this means that the voltage drop across the collector and emitter terminals can be controlled by varying the gate voltage.
The 2SC5654G0L has a wide range of applications, in fields such as automotive electronics, power supplies, and audio amplifiers. The device can be used for low-frequency switching, amplifier and driver stages for radio, television, audio amplifiers, and power supplies. In addition, the 2SC5654G0L can be used for general freewheeling application, where it is required to quickly charge and discharge the output capacitor.
The 2SC5654G0L is a NPN silicon-transistor with a low voltage drop from Collector to Emitter. It has three pins, labeled Gate, Collector and Emitter. The Gate pin is used to control the operation of the transistor, i.e. when a voltage is applied to the Gate the voltage characteristics at the Collector and Emitter are changed. The two terminals, Collector and Emitter, are connected together when the Gate voltage is zero and they are connected in opposite directions when a voltage is applied to the Gate. When the voltage is applied to the Gate, electrons flow between the Collector and Emitter, causing the Collector-Emitter voltage to drop.
The Collector-Emitter voltage drop is typically negative and can vary widely, depending on the voltage applied to the Gate. Furthermore, the current capacity of the transistor also varies widely depending on the voltage applied to the Gate. The characteristics of the 2SC5654G0L are determined largely by the bias current, or base current, that flows from the Gate to the Collector. This bias current must be carefully monitored in the final design of the circuit, in order to ensure that the voltage and current capacities are managed correctly.
In summary, the 2SC5654G0L is a NPN silicon epitaxial transistor in a TO-126 package, designed for medium-power amplifier and low-frequency switching applications. It has a Collector-Emitter saturation voltage of just 0.2V and can be used in automotive electronics, power supplies, audio amplifiers, and general freewheeling applications. The current capacity and voltage drop of the 2SC5654G0L can be controlled by varying the gate voltage and is determined largely by the bias current.
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