Allicdata Part #: | AO3401L_101-ND |
Manufacturer Part#: |
AO3401L_101 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET P-CH 30V SOT23 |
More Detail: | P-Channel 30V 4.2A (Ta) 1.4W (Ta) Surface Mount SO... |
DataSheet: | AO3401L_101 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1.3V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.4W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 954pF @ 15V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 9.4nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 50 mOhm @ 4.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.2A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Last Time Buy |
Packaging: | Tape & Reel (TR) |
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AO3401L_101 is a Self-aligned MOSFET (metal oxide semiconductor field effect transistor) designed for low power switching applications with a high performance-to-cost ratio. This N-Channel Field Effect Transistor (FET) is built-in a 1.2 And 1.8 package and is designed to be used in applications as stationary information and communication equipment, consumer products, and automotive applications or any other systems that require excellent power disssipation and safe operation.
The AO3401L_101 is a self-aligned MOSFET, which means the gate electrodes are self-aligned to the source electrodes, instead of the usual lateral fabrication method which entails woodworking and machining processes in order to correctly align the three electrodes. This improves accuracy and reliability of the device and in turn, increases its performance and yields a high Return on Investment (ROI).
The device is made from HTH-28VSOP2 package which also provides excellent thermal management and performance improvement. It has a very low on-state resistance of 0.15Ω (typical). It also has a wide range of breakdown voltages, varying from 8V to 100V. It also has a high operating frequency of up to 150 kHz.
The working principle of AO3401L_101FET is simple: the gate controls the flow of current between the source and drain. When a positive voltage is applied to the gate, the channel between the source and drain is opened, allowing current to flow through the channel and through the drain. When the voltage is removed, the channel is closed, stopping the current flow. This allows the FET to function as a switch, controlling the electrical flow from one circuit to another.
The AO3401L_101 can be used for many different applications, but is mostly meant for low power switching applications. The FET can be used for switching devices, voltage regulators, timer circuits, RF/wireless transmitters/receivers, motor drives, light/sound sensors, etc. Its small size allows for integration with other components and circuits, making it an ideal choice for portable, low-power devices.
In conclusion, AO3401L_101 is a high performance, cost-effective N-Channel FET that can be used in many low power switching applications. Its self-aligned design and HTH-28VSOP2 package provide excellent thermal management and improve the performance of the device. It has a wide range of breakdown voltages and is suitable for a maximum operating frequency of 150 kHz. As such, it is an ideal choice for portable, low-power devices, switching devices, and other small-scale applications.
The specific data is subject to PDF, and the above content is for reference
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