AO3409L

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.4W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	370pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	9nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	130 mOhm @ 2.6A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	2.6A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Last Time Buy
Packaging:	Tape & Reel (TR)

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AO3409L is an enhancement-mode (normally-off) metal-oxide-semiconductor field-effect transistor (MOSFET) that can be used for low-side switching applications. It is designed for use in a wide number of applications ranging from consumer electronics to automotive applications. AO3409L has a logic-level gate drive, low on-resistance, and a very low voltage drop. It also features an ultralow gate-charge, high symmetry output characteristics, and stable operation over multimode frequencies.The characteristics of AO3409L are generally described in terms of its gate-drain voltage, drain-source voltage, gate-source voltage, gate-source capacitance , and drain-source on-resistance. The gate-drain voltage represents the minimum gate-source voltage required to start current conduction. The drain-source voltage represents the voltage applied to the drain pin, while the gate-source voltage is the voltage applied to the gate. The gate-source capacitance is the total capacitance between the gate and source pins. The drain-source on-resistance is the resistance between the drain and source pins when a predetermined maximum working gate-source voltage is applied. The basic operating principle of the AO3409L is the same as other enhancement-mode MOSFETs. When the gate-source voltage is applied, the gate-source capacitance is released, which allows the gate-to-drain voltage to become negative, increasing the density of mobile charge carriers in the channel region. This lowers the resistance between the drain and source, allowing current to flow. When the gate-source voltage increases, the channel narrows and the resistance between the source and drain increases, resulting in less current flow. When the gate-source voltage falls below the threshold voltage, current conduction ceases. The AO3409L is used in many applications, such as in Automotive Powertrain and Body Electronics, Industrial Control, Photoflash, Smart Meters, Automotive Diagnostics, Gaming, Networked Charging, and LED Lighting Motor Controls. In Automotive Powertrain and Body Electronics, the AO3409L can be used to control fuel injection and spark timing, as well as to control body components such as doors and windows. In Industrial Control, the AO3409L can be used to control motor drivers and power converters. In Photoflash, the AO3409L can be used to control the flash intensity. In Smart Meters, the AO3409L can be used to control energy usage. In Automotive Diagnostics, the AO3409L can be used to monitor engine performance. In Gaming, the AO3409L can be used to control gaming consoles and peripherals. In Networked Charging, the AO3409L can be used to control charging of electric vehicles. Finally, in LED Lighting Motor Controls, the AO3409L can be used to control the brightness of LED lights.Overall, the AO3409L is a solid choice for many applications. It offers low on-resistance, a low gate charge, high symmetry output characteristics, and a logic-level gate drive. Furthermore, the AO3409L is stable when used over multimode frequencies and can handle large peak currents.

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