AO3403L_102

Vgs(th) (Max) @ Id:	1.4V @ 250µA
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.4W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	500pF @ 15V
Vgs (Max):	±12V
Gate Charge (Qg) (Max) @ Vgs:	5.3nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	130 mOhm @ 2.6A, 10V
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	2.6A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Last Time Buy
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

AO3403L_102 Application Field and Working Principle

The AO3403L_102 is a metal-oxide-semiconductor field-effect transistor (MOSFET), which is an important component of electrical circuits. It is a single-gate FET, and its purpose is to control electrical power. This component can be used in many applications, such as amplifying, switching, and rectifying circuits.The AO3403L_102 is a type of MOSFET and it is typically used in medium-power applications such as automotive, industrial, and consumer electronics. It is composed of a metal gate and substrate made of silicon, as well as a source and drain. The gate has a positive voltage that controls the current that passes from the source to the drain. The threshold voltage, which is decreased with positive gate voltage, determines the gate\'s switching rate. The integral reverse body diode allows the component to be used for rectifying circuits.The MOSFET is characterized by the input-to-output characteristics of the device, which are determined by the physical properties of the gate and substrate. In practical applications, the transfer characteristics of the MOSFET are characterized by studying the transfer curves of the device. This study provides important information such as the maximum output current of the device, drain source resistance, and gate threshold voltage.The working principle of the AO3403L_102 is based on a depletion or enhancement mode. In the depletion mode, the equivalent reverse gate diode conducts current at off-state, whereas in the enhancement mode, the gate voltage has to be raised to make enough charge carriers available in the channel.In the depletion mode, the transistor is OFF when its gate voltage is 0 V. When positive voltage is applied to the gate, the top of the p-type channel is pinched off, resulting in a decrease in the channel width and an increase in the channel resistance. This reduces the amount of forward current that can flow between the source and drain. At higher gate voltages, the pinch-off is complete, and the transistor is travelling at its maximum resistance.When using the transistor in the enhancement mode, the transistor is ON at the 0V gate voltage, allowing current to flow between the source and drain. When the voltage applied to the g

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description