Allicdata Part #: | AO3415_108-ND |
Manufacturer Part#: |
AO3415_108 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET P-CH 20V SOT23 |
More Detail: | |
DataSheet: | AO3415_108 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Part Status: | Obsolete |
Description
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Introduction:AO3415_108 is a new type of field effect transistor (FET).The new device features improved power efficiency, low on-resistance, and low gate capacitance.Compared to other MOSFETs, AO3415_108 has a relatively low resistance, allowing it to operate better in higher current applications. Additionally, its low gate capacitance means it can switch quickly, making it suitable for high-speed applications.Application Field:AO3415_108 is widely used in power management applications such as UPS and LED lighting. Its low on-resistance and low gate capacitance make it an ideal choice for high current and high speed applications. Additionally, its low gate capacitance makes it an excellent device for power factor correction applications.The device is also used in the automotive and industrial environments, where it is utilized for switching and amplifying signals. Additionally, it is a popular choice for motor control as well as instrumentation equipment.Working Principle:AO3415_108 is a metal-oxide-semiconductor field-effect transistor (MOSFET) with a n-channel construction. It consists of a source, drain, and gate junction formed between an oxide semiconductor region and an N-type silicon semiconductor.The device operates by allowing or blocking current flow between the drain and source terminals depending on the voltage at the gate terminal. When a positive voltage is applied at the gate terminal, a conducting channel is created between the source and drain, allowing current to flow. Conversely, when a negative voltage is applied, the gate terminal will repel electrons, creating an electrically insulated barrier that blocks the current flow between the source and drain. The device works best when the voltage applied to the gate is between 2 V and 12 V. Furthermore, the AO3415_108 is designed to work with a maximum power dissipation of 43 W, meaning that the device can handle high power applications.Conclusion:AO3415_108 is a new type of MOSFET transistor suitable for power management and high speed applications. Its low on-resistance and low gate capacitance make it well suited to high current and fast switching applications. Additionally, it is also commonly used in automotive and industrial environments, as well as motor control and instrumentation equipment. Working on the principle of allowing or blocking current flow depending on the voltage at its gate terminal, AO3415_108 has a maximum power dissipation of 43 W and can operate at voltages between 2 V and 12 V.The specific data is subject to PDF, and the above content is for reference
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