Allicdata Part #: | AO3413L-ND |
Manufacturer Part#: |
AO3413L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET P-CH 20V SOT23 |
More Detail: | P-Channel 20V 3A (Ta) 1.4W (Ta) Surface Mount SOT-... |
DataSheet: | AO3413L Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.4W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 540pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 6.1nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 97 mOhm @ 3A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Last Time Buy |
Packaging: | Tape & Reel (TR) |
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AO3413L is a single N-type metal-oxide semiconductor field-effect transistor (MOSFET) manufactured by Alpha & Omega Semiconductor. It is a low on-resistance N-channel enhancement mode MOSFET.
AO3413L employs advanced trench technology to provide excellent RDS(on). It is commonly used for load switch, DC-DC conversion, and other switching related applications. It is typically deployed in power load switching applications, as well as in DC-DC conversion, where high efficiency is a requirement because of its low on-resistance features.
The AO3413L MOSFET is a high performance N-channel device with high current carrying capability. It has high input impedance and low output resistance, making it suitable for various switching applications. Additionally, it features an improved thermal resistance characteristic due to its large die size.
When it comes to the working principle of AO3413L, it is based on the principle of a PN junction. A PN junction is a semiconductor junction formed between two types of semiconductor materials: a positively charged P-type material and a negatively charged N-type material. The current flows through the PN junction when a voltage is applied, and the current flow is regulated by the depletion region created around the junction.
When AO3413L is in its active state, the PN junction is biased so that electrons can flow from the N-type material to the P-type material. This enables the transistor to function as an amplifier or a switch. When the voltage across the gate is held at a certain level, the transistor is turned on and the current flows from the source to the drain. When the voltage across the gate is changed the device is turned off and the current flow stops.
Apart from its applications in load switching and DC-DC conversion, AO3413L is also often employed in motor control circuits. This is due to the fact that it is designed to effectively reduce switching losses, which makes it ideal for motor control applications. Additionally, its low RDS(on) allows it to be used in various other applications, such as level shifting, current regulation and buffering, power protection, and power conversion.
Overall, AO3413L is an ideal device for applications that require low on-resistance, low input capacitance, and high current handling capabilities. Its wide range of applications and its low on-resistance features make it one of the most popular MOSFETs for use in various industrial and commercial applications.
The specific data is subject to PDF, and the above content is for reference
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