Allicdata Part #: | AO3456-ND |
Manufacturer Part#: |
AO3456 |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 30V 3.6A SOT23-3 |
More Detail: | N-Channel 30V 3.6A (Ta) 1.4W (Ta) Surface Mount SO... |
DataSheet: | AO3456 Datasheet/PDF |
Quantity: | 1000 |
9000 +: | $ 0.05216 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.4W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 200pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 50 mOhm @ 3.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.6A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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AO3456 is a general-purpose pulsed power application field MOSFET. It is capable of switching up to 4A of alternating current and up to 3V of peak-to-peak voltage. It is designed with a wide range of applications like motor switching, drive circuit control, and power switching circuits. As one of the most reliable switch devices available today, AO3456 provides excellent protection from from over-currents, short circuits, and over-voltage conditions.
AO3456 MOSFETs are constructed with two main components: the source and drain. The source is the positive contact, or input, of the MOSFET device and the drain is the negative contact, or output. The gate contact is the third contact and is used to open and close the circuit between the source and drain. The gate contact is isolated from the other two contacts by a thin dielectric layer that serves as an insulator. This isolation allows the MOSFET to be able to switch rapidly and accurately.
The working principle of the AO3456 MOSFET depends upon the operation of the gate voltage, the source voltage, and the drain voltage. The gate voltage is used to determine the "on" state. When the gate voltage is high relative to the source and drain (VGS > VSD), the MOSFET is in "on" state and electricity can pass through the device. When the gate voltage is low relative to the source and drain (VGS < VSD), the MOSFET is in "off" state and no current can flow through the device.
The source voltage is used to determine the "on" state or the "off" state for this device. When the source voltage is higher than the drain voltage (VGS > VSD), the device is in "on" state. Otherwise, when the source voltage is lower than the drain voltage (VGS < VSD), the device is in "off"state. Finally, the drain voltage is used to determine the capacitance value and the current-carrying capacity of the MOSFET.
When the AO3456 MOSFET is in "on" state, the voltage drop across it is very low. This makes it an ideal device for power switching applications as it requires less drive current and can control high current loads, allowing it to handle high power levels with ease. Additionally, the AO3456 MOSFET has an extremely low on-resistance, which greatly reduces power losses. This, together with its small size, makes the AO3456 an ideal choice for power switching applications.
In conclusion, AO3456 is a reliable and efficient single MOSFET for power switching applications. Its advantages include low on-resistance, high-current handling capability, and fast switching speed. Its dependable protection from over-currents and over-voltages makes it an ideal device for motor switching, drive circuit control, and power switching circuits.
The specific data is subject to PDF, and the above content is for reference
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