Allicdata Part #: | AO3419L_101-ND |
Manufacturer Part#: |
AO3419L_101 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET P-CH 20V SOT23 |
More Detail: | P-Channel 20V 3.5A (Ta) 1.4W (Ta) Surface Mount SO... |
DataSheet: | AO3419L_101 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1.4V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.4W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 620pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 6.6nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 75 mOhm @ 3.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.5A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Last Time Buy |
Packaging: | Tape & Reel (TR) |
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AO3419L_101 belongs to the semiconductor family and it has been made for a specific purpose by manufacturers. The AO3419L_101 is a common source n-channel enhancement mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that has been designed to help with power supply and signal management applications. The highest ratings of the AO3419L_101 configured in its various places and orientations are 24 volts, 1.3 amperes, and 11.6 watts, with a much higher voltage breakdown maximum of 800 volts.
These types of transistors have a number of advantages over the traditional bipolar junction transistors. The power output of the MOSFET is greater than the similar sized BJTs (Bipolar Junction Transistors). They are less susceptible to thermal runaway compared to BJTs and require less base current in operation. They also have a much higher frequency response, allowing for faster switching times when compared to BJTs.
Basic Working Principle
The working principle of the transistor consists of two types of “transistor” elements. The two elements are the source (S) and the drain (D). In order for current to be able to flow through the transistor, the source and the drain must be connected to each other by some means. This can be either through an external circuit or through the transistors internal “contact”. The contact is usually a metal oxide layer that protects the individual source/drain junctions from contact with each other.
In the AO3419L_101 MOSFET, the source and drain are connected to an external circuit, while the internal contact is provided by a gate voltage applied between the source and the drain. This gate voltage must be of the correct voltage, and must remain in order for the current to be permitted to flow through the transistor. When the gate voltage is applied, the internal transistors are “turned on” and the current flows freely.
The advantages of the AO3419L_101 included its wide range of applications for providing power and signal management. Because of its fast switching times, the AO3419L_101 enables applications that require quick response times, or applications that require high accuracy and stability. It can be used to regulate the supply of power between two components, as an audio amplifier, or to switch on and off high power devices, such as motors and relays.
The AO3419L_101 is also easy to install and use and is designed to be interfaced with different control logic, making it ideal for a wide range of applications. It is compatible with a number of different semiconductor packages and is available in various temperatures and voltage ratings.
The specific data is subject to PDF, and the above content is for reference
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