AO3421 Allicdata Electronics
Allicdata Part #:

AO3421-ND

Manufacturer Part#:

AO3421

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET P-CH 30V 2.6A SOT23
More Detail: P-Channel 30V 2.6A (Ta) 1.4W (Ta) Surface Mount SO...
DataSheet: AO3421 datasheetAO3421 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3L
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.4W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The AO3421 is a advanced-level MOSFET designed to be a low-cost component in automotive and industrial applications. AO3421 advantages over conventional power MOSFETs include high-performance with low switching losses, reduced component count, and no need for bulk capacitance. It includes advanced features like integrated gate resistor and intelligent MOSFET driver for improved reliability.

Application Field of AO3421

The AO3421 can be found in a plethora of applications that involve complex electronic systems such as high-power motor drives, power tools, home appliances, automotive systems, light/sounds/ultrasound, as well as various military and industrial control systems. They can be used commutating and switching high voltage, high frequency, high-power and high-voltage circuits. Other lesser-known usages of the AO3421 include power conversion, telecommunication, renewable energy, and mobile devices.

Working Principle of AO3421

The AO3421 is designed to be robust and reliable, featuring a drain-source breakdown voltage of 135 V, gate-source breakdown voltage of 20 V, and drain current of 251 A. It has low input capacitance, low gate charge, and high bias current making it an ideal solution for high-speed applications. The maximum operating temperature for the AO3421 is 125°C, thus making it suitable for high-temperature applications.

The AO3421 utilizes a three-terminal configuration where the source is the main body and the gate and drain are the two controls. This three-terminal configuration enables the AO3421 to perform two types of switching functions. First, the positive gate voltage can be used to turn the MOSFET “ON”, allowing the current to flow from source to drain. Second, the negative gate voltage applied to the MOSFET can be used to turn it “OFF”, preventing the current from flowing from source to drain.

The AO3421 utilizes a multi-layered structure in switching mode of operation. Inside its complex structure are several layers of metal and silicon dioxide forming an outer shield. This enables the AO3421 to be small in size and thus suitable for many applications as well as reducing power consumption. Additionally, the AO3421 employs an integrated gate resistor to ensure safety and reliability. This can increase the MOSFET’s switching pressure, prevent gate source pin leakage, and protect the gate oxide layer from overvoltage damage.

In conclusion, the AO3421 is a high-performance, low-cost MOSFET suitable for many different applications. Its robust construction ensures reliable and safe operation, making it an ideal choice for use in various systems.

The specific data is subject to PDF, and the above content is for reference

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