AO3424 Allicdata Electronics
Allicdata Part #:

785-1017-2-ND

Manufacturer Part#:

AO3424

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 30V 2A SOT23
More Detail: N-Channel 30V 3.8A (Ta) 1.4W (Ta) Surface Mount SO...
DataSheet: AO3424 datasheetAO3424 Datasheet/PDF
Quantity: 99000
Stock 99000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3L
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.4W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 80 mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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AO3424 application field and working principle

AO3424 is a surface mount P-channel MOSFET (metal–oxide–semiconductor field-effect transistors) with a wide range of functionalities and applications. The AO3424 offers excellent switching performance and low on-resistance. It offers very low gate charge and low input capacitance and as such is especially suitable for low current, low voltage applications.

AO3424 can be used in a variety of applications where high power, ultra-low on-resistance and low gate charge are required. These could include power management applications such as DC-DC converters and load switches.

Working principle of AO3424

AO3424 is a P-channel MOSFET, which means it has a P-type semiconductor substrate and its drain is connected to the source. In this type of MOSFET, the source is connected to the ground, while the gate is connected to the voltage source. When a positive gate voltage is applied to the gate electrode, an inversion layer is formed between the gate and the substrate and a positive gate to source voltage is created. This causes current to flow through the channel and consequently the drain to source current increases. The channel is normally very narrow, with a width of less than 10 nanometers, so the on-resistance is very low, making this type of MOSFET suitable for high power applications.

The current flow between the source and the drain is controlled by the gate voltage and is dependent on the applied gate to drain voltage. The switching time of the MOSFET is very fast and the power dissipation is low. The AO3424 has a high input capacitance and a very low gate charge, so it is suitable for applications that require low-frequency switching. At the same time, due to its high power rating, it is also suitable for high frequency switching. It can switch up to 0.7V in less than 10 nanoseconds on its turn-on characteristic or 0.25V in less than 20 nanoseconds on its turn-off transition.

Conclusion

The AO3424 is a P-channel MOSFET with a wide range of functionalities and applications. Due to its low on-resistance, low input-capacitance and low gate charge, the AO3424 is suitable for low-current, low voltage applications. The current flow between source and drain is controlled by the gate voltage, and the switching time of the MOSFET is very fast with a low power dissipation. The AO3424 can switch up to 0.7V in less than 10 nanoseconds on its turn-on characteristic or 0.25V in less than 20 nanoseconds on its turn-off transition. Therefore this MOSFET perfectly meets the requirements for high current, low voltage applications.

The specific data is subject to PDF, and the above content is for reference

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