AO3407L

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

AO3407L is an enhancement-mode Power Metal-Oxide-Semiconductor Field Effect Transistor (Power MOSFET) which has been designed and developed specifically for operating in low voltage applications such as DC-DC converters. It offers excellent on-state characteristics, low gate charge and industry-leading RDS(on). As a result of the continuous improvement of its superior performance, coupled with its industry-leading ESD protection capabilities, AO3407L is becoming an increasingly important component in many industries.

Applications of AO3407L

AO3407L can be found in a wide variety of electronic applications such as DC-DC converters, battery management system, power management system, Logic Level Power Switching, Battery Chargers, In-car Chargers, USB Adapters, and more. It offers superior on-state characteristics, designed for low voltage, low Rds (on), enabling power savings in many applications.

The high voltage and low gate charge of the AO3407L make it particularly desirable for fast switching applications such as motor drives, where its low switching losses can help reduce heat losses and improve efficiency. In addition, it is ideal for mobile device, laptop, and some automotive applications, as its small size, low voltage operation, and good thermal management capabilities make it well suited for these types of applications.

AO3407L has been specifically developed to be used in low voltage applications, such as DC-DC converters. Its low on-resistance and high current capacity make it well suited for buck-boost converters, as well as applications where efficiency is of paramount importance. Additionally, its integrated ESD protection allows it to be safely and reliably used in production, while its superior ruggedness makes it suitable for use in harsh environments where reliability and robustness are desired.

Working Principles of AO3407L

AO3407L is an enhancement-mode power MOSFET. It consists of a source, a substrate and a gate separated by an insulating layer from the drain. When a positive voltage is applied to the gate, electrons from the source tunnel through the gate and accumulate on the substrate. This accumulation of electrons creates an electric field across the insulating layer, which attracts electrons from the drain and forms a conducting channel. An increase in the gate voltage strengthens the attraction for electrons from the drain, which further increases the conductivity of the channel and increases the current flowing through the switch. When the gate voltage is removed, the electric field is reduced, the gate turns off, and no more current flows.

AO3407L offers superior performance in low voltage environments, such as DC-DC converters. It has low gate charge, fast switching speed and low on-resistance which make it well suited for buck-boost converters. In addition, its integrated ESD protection and ruggedness make it reliable and robust for use in a wide range of applications.

AO3407L\'s superior performance makes it a popular choice for many applications. It is a flexible and reliable power MOSFET which is ideal for a wide range of DC-DC converters, battery management systems, power management systems, logic level power switching, battery chargers, in-car chargers, and USB adapters.

The specific data is subject to PDF, and the above content is for reference