AO3420L_103 Allicdata Electronics
Allicdata Part #:

AO3420L_103-ND

Manufacturer Part#:

AO3420L_103

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 20V SOT23
More Detail:
DataSheet: AO3420L_103 datasheetAO3420L_103 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
Description

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The AO3420L_103 is an enhancement mode lateral dual N-channel MOSFET that is manufactured by Alpha & Omega Semiconductor. It belongs to the AO3420L single series and is developed purposely for low current applications in portable devices such as handheld electronics, mobile phones, PDAs and digital cameras.

The MOSFET has a dual N-channel structure with close layout. This allows the device to reduce turn-on time and improve the maximum operating frequency. The device is capable of driving large capacitance loads with its larger inter-electrode capacitance.

The MOSFET features low on-resistance and its maximum total gate charge is low. This reduces the charge that needs to be delivered to the gate of the device to activate the MOSFET, therefore improving efficiency. Additionally it has a Schottky diode as an internal protection which helps prevent from reverse body and drain-source voltage.

The AO3420L_103 operates at 1.8V, 2.8V, 4.5V and 6.0V and its maximum drain-source voltage is 20V. The continuous drain current of the device is -6.2A and the maximum pulse drain current is -12A. The maximum power dissipation is 941mW and the junction temperature is -55°C to +150°C.

The AO3420L_103 is mainly used to replace a P-channel MOSFET and is suitable for DC and AC circuits, in high speed switching applications, voltage control and current detection and control. It is mainly used in battery power equipments with low-voltage signals and load such as notebook computers, digital cameras, mobile handsets and PDAs.

The AO3420L_103 utilises two N-channel MOSFETs located on the same die in a package measuring between 0.8mm x 0.8mm and 1.6mm x 1.6mm. It is designed with a low threshold voltage, allowing very small voltage to control the device and its high breakdown voltage, allowing it to be used in a wide range of applications.

The device is easy to use and has a simple working principle. This involves passing current through the drain and source, with the gate controlling the current passing through. When a positive voltage is applied to the gate, the device turns on and works as a switch, allowing current to pass through the drain-source path. When the voltage to the gate is removed, the MOSFET turns off and current no longer passes.

The AO3420L_103 is a fast-switching power transistor with a variety of applications in the field of low-power electronics. Its small size, low voltage drop and high switching speed make it an ideal choice for such applications. The device is easy to install and together with its low on-resistance and high pulse current, it ensures efficient operation and superior power performance.

The specific data is subject to PDF, and the above content is for reference

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