Allicdata Part #: | AO3422L_104-ND |
Manufacturer Part#: |
AO3422L_104 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 55V SOT23 |
More Detail: | N-Channel 55V 2.1A (Ta) 1.25W (Ta) Surface Mount S... |
DataSheet: | AO3422L_104 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.25W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 300pF @ 25V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 3.3nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 160 mOhm @ 2.1A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 2.1A (Ta) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Last Time Buy |
Packaging: | Tape & Reel (TR) |
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AO3422L_104 is a type of single P-channel and MOSFET, which stands for metal-oxide-semiconductor field-effect transistor. It is a type of active semiconductor device that is widely used for many applications, such as digital and analog circuits, low-power switching and amplifying, and power regulations. AO3422L_104 has applications in both analog and digital circuits, usually for different types of power regulations and amplifying.
AO3422L_104 is a three-terminal device consisting of the source, drain, and gate electrodes with a low on-state resistance. The source and the drain are both heavily doped semiconductor segments, while the gate is a lightly doped semiconductor segment. The source and the drain electrodes may be of either N-type or P-type type, while the gate is of N-type. The drain and drain electrodes are connected to the power supply, while the gate is used to control the flow of current between the source and the drain.
The working principle behind AO3422L_104 is based on MOSFET theory. When a negative voltage is applied to the gate, the electric field between the gate and the source enables electrons to tunnel from the gate to the source. This charging of the gate causes a depletion region to form around it and thus an electric field is created. This in turn creates an electrical barrier between the source and drain, resulting in the current flow between the two being blocked or limited.
When a positive voltage is applied to the gate, the electrons tunnel away from the gate, creating a channel between the source and drain. This channel allows the current to flow freely between the two terminals, thus allowing for an amplified current flow.
AO3422L_104 is used for various applications, such as regulating composite amplifiers, low frequency audio amplifiers and power supply regulators. It is also used in radio transmitters and receivers, amplifiers, and voltage regulators. It is commonly used in LED drivers and LED displays as well.
AO3422L_104 is a very useful and versatile device, which can be used in many applications. It is easy to work with and its working principle makes it an ideal device for many situations.
The specific data is subject to PDF, and the above content is for reference
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