AO4606L

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

AO4606L is a P-channel Metal-oxide semiconductor Field-effect Transistor (MOSFET) array that belongs to the **Transistors - FETs, MOSFETs - Arrays** category. It has two circuits and is built with low-on-resistance DMOS Technology to provide very low on-state resistance and low-threshold voltage. AO4606L can be used in various applications that relies on switching between two voltages, acting as a switch between circuits.

AO4606L has a maximum voltage of 20V and a maximum drain current of 11A in the P-channel configuration. It also comes with very quick operating speeds, having a typical turn-on delay time of 12ns, a typical rise time of 4ns, and a maximum turn-off delay time of 33ns. This makes it perfect for applications that require fast and efficient transitioning between two signals.

AO4606L is also matched-pair monolithically for improved thermal tracking and minimized fluctuations with temperature changes. Moreover, this chip includes a charge pump circuit that provides breakdown voltage protection and eliminates latch-up. This makes it a device suitable for high-current load applications.

Due to its advanced features and design, AO4606L can be used in various applications. Some of the most notable application fields where AO4606L excels are breaker applications, switch-mode power supplies, solenoids, relays, digital-to-analog converters, microcomputer plus I/O interface, and power DC/DC converters.

Speaking about AO4606L working principle, this is a voltage-controlled device. As such, the voltage applied to its gate-source terminal will determine if a channel is open or closed, allowing current to flow through it or not. When the gate-source voltage is low, the channel between the source and drain is closed. When it is high, the channel opens and the source and drain are connected.

In the channels are open, the resistance between the source and the drain depends on the gate-source voltage and is usually very low. For AO4606L, the static drain current is 11A and the static drain-source on-resistance is 0.3ohms. The low-on-resistance capability of AO4606L ensures low voltage drop and high-efficiency current flow in the circuit.

To sum up, AO4606L is a P-channel 5V MOSFET array that is built with low-on-resistance DMOS Technology. It is suitable for applications that require fast and efficient transitioning between two signals and it can be used in breaker applications, switch-mode power supplies and solenoids. Lastly, its working principle is voltage-controlled, the gate-source voltage determining if the channel between the source and drain is open or closed.

The specific data is subject to PDF, and the above content is for reference