AO4614BL_DELTA Allicdata Electronics
Allicdata Part #:

AO4614BL_DELTA-ND

Manufacturer Part#:

AO4614BL_DELTA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N/P-CH 40V 8SOIC
More Detail: Mosfet Array N and P-Channel 40V 6A (Ta), 5A (Ta) ...
DataSheet: AO4614BL_DELTA datasheetAO4614BL_DELTA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Last Time Buy
FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 5A (Ta)
Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V, 45 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V, 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V, 1175pF @ 20V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Description

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AO4614BL is a specific type of Field-Effect Transistors (FETs), produced primarily by Alpha and Omega Semiconductor Inc. It is a dual N-Channel Enhancement Mode Vertical DMOSFET that consists of two independent N-Channel MOSFETs. Each MOSFET has its own gate, drain and source terminals, with the drains and sources being connected internally. This allows the device to be used in either parallel or series configurations.

The main application field for AO4614BL is for general-purpose enhancement mode switching or linear applications, such as motor control and high frequency switching. Its of benefit in these applications due to its low on-resistance, fast switching speeds and single-ended logic configuration. It is particularly suitable for high-speed, low-voltage applications such as automotive, consumer and industrial electronics circuit designs.

The working principle of a FET is that it uses a gate voltage to control current flow between the source and the drain. As an enhancement type of MOSFET, the gate of the AO4614BL remains essentially off until the gate-to-source voltage exceeds a relatively low threshold. This results in minimal drain-to-source leakage current when the device is in the off state. When the gate-to-source voltage exceeds the threshold voltage, the FET turns on and current begins to flow from the source to the drain.

In addition to its low on-resistance and fast turnaround times, the AO4614BL also features a current suppression capability, as well as thermal shutdown protection. This allows the device to be operated safely and reliably under a wide range of conditions. The current suppression capability helps to reduce switching transients and provides improved system long-term reliability. The thermal shutdown capability helps ensure the device is protected from excessive operating temperatures.

Overall, the AO4614BL is a highly versatile and reliable MOSFET device, suitable for a wide range of applications. Its low on-resistance, fast switching speed and current suppression capability make it suitable for use in high-speed and low-voltage circuits. In addition, its thermal shutdown protection helps to ensure the device is protected from excessive operating temperatures, ensuring it operates safely and reliably over its full range of conditions.

The specific data is subject to PDF, and the above content is for reference

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