| Allicdata Part #: | AO4614BL_201-ND |
| Manufacturer Part#: |
AO4614BL_201 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Alpha & Omega Semiconductor Inc. |
| Short Description: | MOSFET N/P-CH 40V 8SOIC |
| More Detail: | Mosfet Array N and P-Channel 40V 6A (Ta), 5A (Ta) ... |
| DataSheet: |  AO4614BL_201 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Part Status: | Last Time Buy |
| FET Type: | N and P-Channel |
| FET Feature: | Standard |
| Drain to Source Voltage (Vdss): | 40V |
| Current - Continuous Drain (Id) @ 25°C: | 6A (Ta), 5A (Ta) |
| Rds On (Max) @ Id, Vgs: | 30 mOhm @ 6A, 10V, 45 mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 10.8nC @ 10V, 22nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 650pF @ 20V, 1175pF @ 20V |
| Power - Max: | 2W |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SOIC |
Description
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AO4614BL_201 is an N-channel enhancement mode depletion type vertical DMOS double Fet array developed by Alpha and Omega semiconductor Inc. It is most suitable for high voltage and current level, low RDS (ON) power control applications. The AO4614BL_201 can be used wherever a large number of N-type FETs are required in a very small space.The AO4614BL_201 provides flexibility by offering two individually integrated FETs with the same operating characteristics in one package. The FET is connected in a back-to-back arrangement, so that the FET gate connection is at the same potential. The array is connected in an isolated dual N-channel configuration, which allows the devices to be independently controlled. The AO4614BL_201 can be used in a variety of applications such as: motor speed controller, solenoid and actuator drivers, load switch and level shifter in automotive and industrial motor control, active filters and negative voltage generators, power management and energy conservation. In particular, the AO4614BL_201 is suitable for high voltage isolation and power control applications where low rDS (on) and a small form factor are required.The AO4614BL_201 has three terminals: source, drain, and gate. The source and the drain are connected in a back-to-back configuration, and the gate is isolated from the other two terminals. The source and drain are connected in such a way that the current flows from source to drain. The voltage applied to the gate determines the conductivity of the device. When a positive voltage is applied to the gate, the device becomes conductive and allows current to flow from the source to the drain. In a depletion mode operation, a negative potential applied to the gate will turn the device off. The AO4614BL_201 is built using advanced CMOS-DMOS fabrication process. This technology gives the device high power dissipation, low on-resistance, and fast switching capability. Its RDS (ON) is low, so it can be used to enhance power dissipation in applications with high current levels. Moreover, its compact size makes it suitable for applications in limited space. In conclusion, AO4614BL_201 is an ideal array for various high voltage applications as it offers robustness and high performance in terms of low RDSon and fast switching capability, with a small footprint. It is designed for applications requiring high power dissipation and low gate drive such as motor speed controllers, load switches, level shifters, and active filters.
The specific data is subject to PDF, and the above content is for reference
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