AO4613_001 Allicdata Electronics
Allicdata Part #:

AO4613_001-ND

Manufacturer Part#:

AO4613_001

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N/P-CH 30V 8SOIC
More Detail: Mosfet Array N and P-Channel 30V 2W Surface Mount...
DataSheet: AO4613_001 datasheetAO4613_001 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: --
Rds On (Max) @ Id, Vgs: 24 mOhm @ 7.2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Description

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AO4613_001 is a family of monolithic field-effect transistors (FETs), or FET arrays, manufactured by Alpha and Omega Semiconductor. The AO4613_001 family consists of single, dual, quad and octal versions of the devices, providing a range of proven performance and cost-effective solutions for industrial, automotive, and consumer applications.

AO4613_001 Applications

The AO4613_001 is a versatile family of solutions, making it suitable for use in a wide array of applications. The most common applications include:

  • Signal amplification in sound systems, high-speed data routers, cameras, and CCTV systems.
  • Impedance conversion and analog signal detection in automotive systems.
  • Power control and switching in industrial machinery, motors, and household appliances.
  • DC/DC regulating and pulse current control for lighting.

AO4613_001 Working Principle

AO4613_001 employs the metal-oxide semiconductor field-effect transistor (MOSFET) design principle. This technology enables the device to switch current on and off with very low power consumption, making it suitable for applications that require sensitive and efficient current control.

The device utilizes a semiconductor substrate with a number of metal oxide layers and a gate electrode that is connected to the substrate. When a potential difference is applied to the gate electrode, it allows electrons to pass through the metal-oxide layers and switch the current on or off, depending on the value of the voltage.

The device features an electro-static discharge (ESD) protection, allowing it to withstand high voltages without damaging the device. This ensures reliable and durable operation in harsh environments. The device also employs a vertical N-type MOSFET structure which can handle higher currents and achieve excellent switching performance.

The AO4613_001 family is equipped with a low-impedance source/drain configuration and internal gate resistance. This feature provides greater power efficiency and allows for reliable operation in applications that require high power delivery.

The device also offers a broad range of pass current and protection level ratings, making it suitable for a variety of applications which require low power dissipation and high current control.

Conclusion

The AO4613_001 is a versatile family of monolithic FETs or FET arrays, featuring low power dissipation, high current control, and reliable operation in a variety of applications. These devices are suitable for use in sound systems, automotive systems, industrial machinery, household appliances, and lighting applications.

The specific data is subject to PDF, and the above content is for reference

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