AO4629

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AO4629 is a low on-resistance and size-matched 2X2 array of low-voltage N-MOSFETs. It is designed for a wide variety of switches and solutions in RF, LED lighting, and general-purpose uses. This type of FET array is usually used to switch high current and low voltage signals in analog and digital circuits. The device features an extremely low on-resistance per element, very low leakage currents and is designed to offer flexibility and high performance in a wide range of applications.

The AO4629 array consists of N-FETs with a structure that was optimized for low resistance and fast switching times. The device has two low-voltage N-channel MOSFETs that are connected together in a monolithic package. This allows the design to be very efficient, reducing cost and saving board space. The device’s low drain-source resistance, combined with its low gate-source capacitance, allows fast switching on-off times and driver-gate rise times. The packages incorporate both RGO (resistive gate oxide) and PTMOSFET technologies that provide up to five times lower resistance than normal MOSFETs.

The AO4629 is designed for low voltage applications, with a maximum drain-source voltage of 10V. The device features a low on-resistance of 0.17 ohms and a maximum continuous drain current of 2.4A when operating at 4.5V. It has a low gate-source threshold voltage of 0.7V and its maximum operating frequency is 2MHz. The device also features a low gate charge, which helps reduce power dissipation.

The AO4629 array device is ideal for use in RF applications as it provides very fast switching times, low gate-source capacitance and low on-resistance. It is also suitable for switching low voltage signals in digital and analog circuits due to its low threshold voltage and its high operating speed. The device’s wide current range, low switching times and small size make it ideal for system solutions such as LED lighting and general purpose switches.

The AO4629 array is a low cost, low power device that offers a wide variety of solutions for applications requiring fast switching, low voltage, and low resistance. It features a low threshold voltage, low drain-source resistance, and low gate-source capacitance, making it ideal for analog, digital and RF circuits. The device also features a low gate charge and high operating speed, making it ideal for switching solutions in LED lighting and power circuits.

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