AO4614BL Allicdata Electronics
Allicdata Part #:

AO4614BL-ND

Manufacturer Part#:

AO4614BL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N/P-CH 40V 8SOIC
More Detail: Mosfet Array N and P-Channel 40V 6A (Ta), 5A (Ta) ...
DataSheet: AO4614BL datasheetAO4614BL Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Part Status: Last Time Buy
FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 5A (Ta)
Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V, 45 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V, 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V, 1175pF @ 20V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Description

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The AO4614BL is an array of four N-Channel MOSFETs designed for high power switching applications such as DC to DC converters, motor drives, and battery switching. It is designed in an exposed DTMOSIII process that ensures fast switching speeds, low gate charge and low on-state resistance for larger output currents.

The AO4614BL is a logic level N-channel MOSFET array, consisting of four independent N-Channel enhancement mode MOSFETs. Each device features two logic level gate inputs with a typical threshold voltage of 3V. The gate inputs are connected internally between the drain and source electrodes, such that when the gate voltage is higher than the threshold voltage the device handles a certain load current. On the other hand, when the gate voltage is lower than the threshold voltage the device blocks the load current.

The drain-source breakdown voltage, or VDS, of the AO4614BL is rated at 45V. This is the voltage that the device can handle without the FET turning on and passing load current, making it ideal for applications that require high voltage. As the device is made using an exposed DTMOS (Deep Trench Metal Oxide Semiconductor) process, it offers very low on-state resistance or RDSon. This parameter determines how much power is lost in the FET, and the AO4614BL offers very low losses, making it ideal for power switching based applications.

The AO4614BL offers high switching performance due to its low RDSon, making the device capable of handling high speed switching applications. The device is thermal and short circuit protected, by a built-in temperature sensor that shuts the device off if it overheats. This ensures that the device will not be damaged in the event of an overload.

The excellent power capability, along with its low on-resistance makes the AO4614BL perfect for high power applications such as DC-DC converters, motor drives, solenoid control, and battery switching. Its low switching losses make it ideal for low voltage applications, where low losses and fast switching speeds are a must. Its logic level threshold makes it easy to control, with a wide variety of microcontrollers and logic circuits.

The specific data is subject to PDF, and the above content is for reference

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