AO4612

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The AO4612 is an advanced N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) array featuring low R_DSON (drain-source on-resistance). With its small size, low gate charge and low capacitance, this makes it an ideal solution for various applications, from light-weight, high-frequency projects to power-saving, high-density designs that demand maximum efficiency and low losses. In this article, we’ll discuss the AO4612’s application field and working principle.

Application Field

The AO4612 is designed to be used in any field requiring reliable and high-efficiency power switching in a compact package. These applications include motor control, power converters, dc-to-dc conversion circuits, power amplifiers and Class D audio. It can also be used as a level shifter or driver for complementary MOSFETs in synchronous rectification applications, as well as low V_DS power circuits.

The AO4612 also has a low gate threshold, allowing the MOSFET to be triggered by lower voltages, enabling the use of low-voltage control in applications such as microcontrollers and logic-level control. This makes it well suited for use in small automotive, industrial and consumer electronics applications which need efficient power switching.

The AO4612 also has a large drain current, allowing maximum efficiency in high-current applications. It also features fast switching times, allowing rapid power transfer in systems operating at high frequencies, such as switching converters or high-power audio amplifiers.

Working Principle

MOSFETs are voltage-controlled devices, which means that their operation depends on the difference between the gate and source terminals. A higher gate-source voltage results in a greater drain-source current (I_DS). Conversely, when the gate-source voltage is decreased, the resulting current decreases as well. This principle is known as the ‘MOSFET Area Law’.

The AO4612, being an N-channel MOSFET, is capable of sustaining and controlling the voltage between the drain and source of the circuit. With its low drain-source on resistance (R_DSON), it is capable of providing a high-Switching speed (higher than 20V/ns) and a low threshold voltage, allowing it to be triggered by lower gate voltages. This, in turn, enables the MOSFET to efficiently switch, reducing power losses.

In addition, the AO4612 is capable of sustaining very high peak channel temperature. This is done by having two N-channel MOSFETs in a single package, with gate and source tied together. This allows each of the two MOSFETs to be individually turned on, leading to an increase in the switch current and improved power dissipation performance.

The AO4612 also features a low thermal resistance R_TH, ensuring maximum power transfer efficiency and enabling efficient heat dissipation. This makes it an ideal choice for applications which require efficient power switching with higher power dissipation performance.

Conclusion

The AO4612 is an excellent choice for projects requiring reliable and efficient power switching, with its small size, low gate charge, low capacitance and high peak temperature withstand capabilities making it ideal for a variety of applications. Moreover, its low R_DSON also enables efficient switching with low losses, while its low thermal resistance ensures maximum power transfer efficiency and proper heat dissipation.

The specific data is subject to PDF, and the above content is for reference