AO4616L_103

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AO4616L_103 array is a vertical double-diffused metal oxide semiconductor field effect transmitter (DMOSFET) array developed by Avago Technologies. It consists of two N-Channel enhancement mode power MOSFETs that are arranged in a half-bridge configuration. The two devices have different structure sizes and can be used in a variety of power management applications that require high and low side switching. This array is suitable for use in switched-mode power supplies (SMPS) and resonant mode power supplies.

AO4616L_103 Application Field

AO4616L_103 array is designed for use in a variety of power management applications. It can be used in consumer electronics such as home appliances, industrial automation, and computer peripheral application. It is also suitable for DC/DC and AC/DC conversion, motor driver applications, and telecommunications applications. Besides, this array can be used in various switching applications such as high-side driver, low-side driver, charge pump, and switching regulator applications.

Working Principle

The two MOSFETs in the AO4616L_103 array are arranged in a half bridge configuration, with one connected in series between a positive voltage source and the load and the other connected in series between a negative voltage source and the load. The two devices operate independently and switch on/off in a complementary manner, which results in a pulsed output voltage.Both MOSFETs use vertical double-diffused metal oxide semiconductor structure, which means that two distinct layers of N-type material are created in the same substrate by doping of the substrate. This structure offers several advantages such as efficient heat dissipation and superior reliability.When a source voltage is applied, a current is established in each MOSFET, allowing current to flow from its source to its drain as long as the gate voltage of the MOSFET is turned on. Both MOSFETs can be independently switched on/off by applying a gate voltage. The gate voltage must exceed the MOSFET’s threshold voltage in order to turn it on. When the gate voltage is below the threshold voltage, the MOSFET is turned off and the current is interrupted. As a result, the output voltage of the AO4616L_103 array is proportional to the duty cycle of the gate signal.

In summary, AO4616L_103 array consists of two N-channel enhancement mode MOSFETs in a half-bridge configuration which can be used in a variety of power management applications requiring high and low side switching. This device utilizes the vertical double-diffused MOSFET structure and is switched on/off by applying a gate voltage, resulting in a pulsed output voltage that is proportional to the duty cycle of the gate signal.

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