AOD4182_001

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The AOD4182_001 is a logic level enhancement mode, N-channel metal-oxide-semiconductor field-effect transistor (MOSFET). The device is constructed with a dielectric layer between the gate and the body and provides better performance than bipolar junction transistors (BJT) in terms of switching speed, on-state resistance, and scalability.

The AOD4182_001 is ideal for use in switching and low-power amplifying applications, such as: switching regulators, buck converters, logic level switches, and general purpose amplifier stages.The device can also be used for power MOSFET cascode applications and as a single control element for a variety of circuits such as low-voltage switching regulators, low-noise, low-distortion preamps, and others.

The AOD4182_001 is a power MOSFET with low on-resistance and low capacitance. The device is fabricated on a high-voltage silicon-on-insulator (SOI) with a trench gate oxide that features faster switching and improved immunity to latch-up compared to equivalent devices with a planar gate oxide. The device also features a low on-resistance and breakdown voltage that is adjustable by the externally applied gate voltage.

The AOD4182_001\'s gate is driven by an external applied voltage, creating an electric field between the gate and the channel. This electric field effectively depletes the channel, moderating the current flowing through the source and drain regions. The current-voltage relationship between source and drain is linear, making the MOSFET an effective switch. When the gate-source voltage is increased, the MOSFET becomes more conductive, allowing more current to flow between the source and drain.

The AOD4182_001 has a maximum drain-source voltage rating of 15V, a maximum drain current rating of 100m-A, and a maximum on-resistance of 40 ohms. It has a threshold voltage of -2V and a body diode reverse-recovery time of 4ms. The device operates over a temperature range of -55°C to 150°C.

In high-voltage circuits in which commutation losses of power devices are unacceptable, MOSFETs are often the only choice. The AOD4182_001 offers excellent performance as a high-voltage device, particularly as a switching device. In addition, its low capacitance also makes it suitable for applications where low power loss and excellent fast switching characteristics are desirable.

The AOD4182_001 is a highly efficient and reliable MOSFET with a robust design suitable for a range of power switching and amplification applications. The device offers excellent switching and on-resistance performance, making it an ideal choice for a variety of power electronics applications. Its adjustable on-resistance significantly reduces power losses, making it an ideal choice for cost-sensitive applications.

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