Allicdata Part #: | AOD4T60P-ND |
Manufacturer Part#: |
AOD4T60P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH |
More Detail: | N-Channel 600V 4A (Tc) 83W (Tc) Surface Mount TO-2... |
DataSheet: | AOD4T60P Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 83W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 522pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2.1 Ohm @ 2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The AOD4T60P is a silicon-gate trench-gate MOSFET manufactured by Panasonic. It is a surface mounted Dual N-channel logic-level enhancement-mode MOSFET that is designed for use in cellular phone, portable PC, wireless communications and digital consumer products. The AOD4T60P is a single-gate MOSFET and has a drain current rating of 250A continuous and 600A pulsed, which makes it well-suited for applications ranging from low to high power. In addition, the AOD4T60P has an extremely low thermal resistance and a small package size, making it an ideal choice for portable electronics.
The AOD4T60P is designed to operate under a wide range of conditions and is ideal for use in high-power, low-noise, low-voltage systems. The device features on-resistance ratings as low as 0.37Ω and a low gate-source threshold voltage of 1V, allowing it to be used in very power-efficient applications. Its low input capacitance and fast switching time make it suitable for high-speed applications. Furthermore, the AOD4T60P is designed for low gate-charge losses, meaning it can be used with high frequency switching and output stage circuitry.
The working principle of the AOD4T60P is relatively simple. The device works by utilizing the principle of MOSFET (Metal oxide semiconductor field effect transistor) technology. When it is activated, the AOD4T60P converts an electrical signal into a source-drain current. This process is achieved through controlling the electrical field that exists between the source and the drain. In short, whenever an electrical signal is received by the device, it causes a change in the electric field between the source and the drain, resulting in a corresponding change in the current flow.
The AOD4T60P can be used in a variety of applications, such as power switching, DC-DC converters, motor controls, power amplifiers, power supplies and RF power amplifiers. It can also be used for various low-voltage switching operations. Furthermore, the AOD4T60P is suitable for applications requiring high-speed switching, such as high-bandwidth video applications, digital communication systems, and in medical equipment.
In conclusion, the AOD4T60P is a MOSFET device designed for use in high-power, low-noise, low-voltage systems. Its high on-resistance ratings and gate-source threshold voltage make it an ideal choice for power efficient applications. Additionally, its low input capacitance and fast switching time make it suitable for applications requiring high-speed switching. The AOD4T60P is a very useful device and can be used in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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